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Engineering >> 2015, Volume 1, Issue 3 doi: 10.15302/J-ENG-2015043

Development of 8-inch Key Processes for Insulated-Gate Bipolar Transistor

CRRC Zhuzhou Electric Locomotive Institute Co., Ltd., Zhuzhou, Hunan 412000, China

Received: 2015-08-09 Revised: 2015-08-26 Accepted: 2015-09-17 Available online: 2015-09-30

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Abstract

Based on the construction of the 8-inch fabrication line, advanced process technology of 8-inch wafer, as well as the fourth-generation high-voltage double-diffused metal-oxide semiconductor (DMOS+) insulated-gate bipolar transistor (IGBT) technology and the fifth-generation trench gate IGBT technology, have been developed, realizing a great-leap forward technological development for the manufacturing of high-voltage IGBT from 6-inch to 8-inch. The 1600 A/1.7 kV and 1500 A/3.3 kV IGBT modules have been successfully fabricated, qualified, and applied in rail transportation traction system.

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