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Frontiers in Energy >> 2017, Volume 11, Issue 1 doi: 10.1007/s11708-016-0432-8
Analysis of the double-layer α-Si:H emitter with different doping concentrations for α-Si:H/c-Si heterojunction solar cells
Institute of Photovoltaics, Nanchang University, Nanchang 330031, China
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Keywords
double-layer emitter ; α-Si:H/c-Si heterojunction solar cell ; short circuit current ; quantum efficiency ; current-voltage-temperature
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