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Strategic Study of CAE >> 2005, Volume 7, Issue 6

Theoretic Expression of Silicon Solar Cell Load Resistance at Maximum Power Point

1. Department of Thermal Science and Energy Engineering of University of Science and Technology of China , Hefei 230027 , China

2 Institute of Power Electronics and Control Technology , Sun Yat-sen University , Zhuhai , Guangdong 519082 , China

Funding project:国家自然科学(青年)基金资助项目(59006487) Received: 2004-07-12 Available online: 2005-06-20

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Abstract

Based on the equation of silicon solar cell current intensity, the theoretic expression of silicon solar cell load resistance at maximum power point is deduced. Not consistent with the normal electronical circuit, the load resistance is larger than the series resistance. And the ratio descends along with the ascendance of temperature. The experimental results agree with the theoretical predicts well.

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References

[ 1 ] EnslinJHR , WolfMS , SnymanDB , SwiegersW .Integratedphotovoltaicmaximumpowerpointtrackingconverter[J].IEEETransactionsonIndustrialElectronics, 1997, 44 (6) :769~773

[ 2 ] 程晓舫, 李 坚, 余世杰.晶体硅太阳电池串联内阻的函数形式[J].太阳能学报, 2004, 25 (3) :345~349 link1

[ 3 ] SinghVN , SinghRP .Amethodforthemeasurementofsolarcellseriesresistance[J].J .PhysD , 1983, 10:1823~1825

[ 4 ] 刘恩科, 等.光电池及其应用[M ].北京:科学出版社, 1989.103 link1

[ 5 ] 余世杰, 何慧若译.太阳能的光伏利用[M ].合肥:合肥工业大学, 1991.11~17

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