2007, Volume 9, Issue 11
Strategic Study of CAE >> 2007, Volume 9, Issue 11
Study on the Development of Germanium Industry in Yunnan Province
1. Yunnan Metallurgy Group Co. Ltd, Kunming 650031, China ;
2. Kunming University of Science and Technology, Kunming 650093, China
Next Previous
Abstract
Germanium is a typical dispersed element, it is the most important semiconductor material except for silicon. Today, Germanium is used principally in the field of infrared optical, telecommunication fiber optics, a polymerization catalyst for polyethylene terephthalate(PET), a kind of commercially important plastic in solar cell and in biomedicine, and as a semiconductor and substrate in electronics circuitry. Germanium resource is scarce in the earth. The reserve of germanium in China ranks first in the world. Yunnan Province owns about40percent of germanium reserve of China and owns the basis of research and development in the field of infrared optical, so it is very significant to develop germanium industry in Yunnan. This paper analyzes the exterior and interior circumstances for the industrial development of germanium in Yunnan, brings forward the orientation of development and the total target of Yunnan germanium industry from2006to2020, and discusses the industrial chains of germanium, product position, industrial layout, the supporting system and the key projects.
Keywords
germanium resources ; industrial development of germanium ; sustainable development ; Yunnan
Figures
图1
References
[ 1 ] 涂光炽.分散元素地球化学及成矿机制[M].北京:地质出版社,2004
[ 2 ] Bernstein L R . Germanium geochemistry and mineralogy :Geochimical [J] .Cosmochimica Acta , 1985 , 49 : 2409 ~ 2422 link1
[ 3 ] 冯桂林,何蔼平.有色金属矿产资源的开发及加工技术(提取冶金部分)[M].昆明:云南科技出版社,2000
[ 4 ] Sangsingkeow Pat , Berry K D . Dumas E J . Advances in germanium detector technology [J] . Nuclear Instruments and Methods in Physics Research Section A : Accelerators , Spectrometers , Detectors and Associated Equipment , 2003 , 505(1 ~ 2) : 183 ~ 186 link1
[ 5 ] Das N C ,Monroy C , Jhabvala M . Germanium junction field effect transistor for cryogenic applications [ J ] . Solid-State Electronics , 2000 , 44(6) : 937 ~ 940 link1
[ 6 ] Meyer D J ,Webb D A ,Ward M G . Applications and processing of SiGe and SiGe : C for high-speed HBT devices [J] . Materials Science in Semiconductor Processing , 2001 , 4(6) : 529 ~ 533 link1
[ 7 ] 涂光炽.分散元素地球化学及成矿机制[M].北京:地质出版社,2004
[ 8 ] 邓明国,秦德先,雷振,等.滇西褐煤中锗富集规律及远景评价[J].昆明理工大学学报(理工版),2003,28(1):1~3,7 link1
京公网安备 11010502051620号
