2009, Volume 11, Issue 11
Strategic Study of CAE >> 2009, Volume 11, Issue 11
Analytical models for the surface electrical field and temperature distributions of novel PB-PSOI devices
1. National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China;
2. School of Electronic Science and Technology, Anhui University, Hefei 230039, China
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Abstract
In this paper, the 2-D analytical models for the surface electrical field and temperature distributions of PB-PSOI devices in terms of Poisson's solution and thermal diffusion solution have been suggested. The analytical results of the presented models show a good agreement with the numerical simulation results obtained by Medici. The dependences of the surface electrical field and temperature on the thickness and the length of the buried oxide have also been discussed in detail. Finally, the methods to optimize the thickness and the length of the buried oxide have been proposed to achieve the high performance of PB-PSOI devices.
Keywords
PB-PSOI ; surface electrical field ; temperature distribution ; buried oxide
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References
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