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Frontiers of Information Technology & Electronic Engineering >> 2021, Volume 22, Issue 10 doi: 10.1631/FITEE.2000330
Band-gap tunable (GaxIn1−x)2O3 layer grown by magnetron sputtering
Affiliation(s): Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China; Center for Optoelectronics Materials and Devices & Key Laboratory of Optical Field Manipulation of Zhejiang Province, Zhejiang Sci-Tech University, Hangzhou 310018, China; School of Mechanical Engineering, Shanghai Dianji University, Shanghai 200245, China; less
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(GaxIn1−x)2O3薄膜 ; 带隙可调谐 ; 磁控溅射
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