《能源前沿（英文）》
>> 2017年
第11卷
第1期
doi:
10.1007/s11708-016-0430-x
RESEARCH ARTICLE
An industrial solution to light-induced degradation of crystalline silicon solar cells
. State Key Lab of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China.. Changzhou Shichuang Energy Technology Co., Ltd, Liyang 213300, China
录用日期：
2016-10-17
发布日期：
2016-11-16
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摘要
Boron-oxygen defects can cause serious light-induced degradation (LID) of commercial solar cells based on the boron-doped crystalline silicon (c-Si), which are formed under the injection of excess carriers induced either by illumination or applying forward bias. In this contribution, we have demonstrated that the passivation process of boron-oxygen defects can be induced by applying forward bias for a large quantity of solar cells, which is much more economic than light illumination. We have used this strategy to trigger the passivation process of batches of aluminum back surface field (Al-BSF) solar cells and passivated emitter and rear contact (PERC) solar cells. Both kinds of the treated solar cells show high stability in efficiency and suffer from very little LID under further illumination at room temperature. This technology is of significance for the suppression of LID of c-Si solar cells for the industrial manufacture.
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