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2017年 第11卷 第1期

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《能源前沿（英文）》 >> 2017年 第11卷 第1期 doi: 10.1007/s11708-016-0432-8

Analysis of the double-layer α-Si:H emitter with different doping concentrations for α-Si:H/c-Si heterojunction solar cells

Institute of Photovoltaics, Nanchang University, Nanchang 330031, China

录用日期： 2016-10-27 发布日期： 2016-11-16
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Double-layer emitters with different doping concentrations (DLE) have been designed and prepared for amorphous silicon/crystalline silicon (α-Si:H/c-Si) heterojunction solar cells. Compared with the traditional single layer emitter, both the experiment and the simulation (AFORS-HET, http://www.paper.edu.cn/html/releasepaper/2014/04/282/) prove that the double-layer emitter increases the short circuit current of the cells significantly. Based on the quantum efficiency (QE) results and the current-voltage-temperature analysis, the mechanism for the experimental results above has been investigated. The possible reasons for the increased current include the enhancement of the QE in the short wavelength range, the increase of the tunneling probability of the current transport and the decrease of the activation energy of the emitter layers.

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