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2017年 第11卷 第1期

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《能源前沿（英文）》 >> 2017年 第11卷 第1期 doi: 10.1007/s11708-016-0433-7

POCl3 diffusion for industrial Si solar cell emitter formation

School of Photovoltaic and Renewable Energy Engineering, UNSW Australia, Sydney, NSW 2052, Australia

录用日期： 2016-11-08 发布日期： 2016-11-16
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POCl diffusion is currently the standard method for industrial n-type emitter fabrication. In this study, we present the impact of the following processing parameters on emitter formation and electrical performance: deposition gas flow ratio, drive-in temperature and duration, drive-in O flow rate, and thermal oxidation temperature. By showing their influence on the emitter doping profile and recombination activity, we provide an overall strategy for improving industrial POCl tube diffused emitters.

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