《能源前沿（英文）》
>> 2017年
第11卷
第1期
doi:
10.1007/s11708-016-0443-5
RESEARCH ARTICLE
Defect passivation on cast-mono crystalline screen-printed cells
. School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW 2052, Australia.. College of Materials & Environmental Engineering, Hangzhou DianZi University, Hangzhou 310018, China
录用日期：
2016-11-09
发布日期：
2016-11-16
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摘要
Cast-mono crystalline silicon wafers contain crystallographic defects, which can severely impact the electrical performance of solar cells. This paper demonstrates that applying hydrogenation processes at moderate temperatures to finished screen print cells can passivate dislocation clusters within the cast-mono crystalline silicon wafers far better than the hydrogenation received during standard commercial firing conditions. Efficiency enhancements of up to 2% absolute are demonstrated on wafers with high dislocation densities. The impact of illumination to manipulate the charge state of hydrogen during annealing is investigated and found to not be significant on the wafers used in this study. This finding is contrary to a previous study on similar wafers that concluded increased H or H from laser illumination was responsible for the further passivation of positively charged dangling bonds within the dislocation clusters.
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