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《能源前沿(英文)》 >> 2017年 第11卷 第1期 doi: 10.1007/s11708-016-0437-3
Plasma enhanced chemical vapor deposition of excellent a-Si:H passivation layers for a-Si:H/c-Si heterojunction solar cells at high pressure and high power
. Key Laboratory of Solar Thermal Energy and Photovoltaic System of Chinese Academy of Sciences, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China; University of Chinese Academy of Sciences, Beijing 100049, China.. Key Laboratory of Solar Thermal Energy and Photovoltaic System of Chinese Academy of Sciences, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China.. GCL System Integration Technology Co. Ltd, Shanghai 201406, China
摘要
关键词
PECVD ; high pressure and high power ; a-Si:H microstructure ; passivation ; heterojunction solar cell
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