正文
《能源前沿(英文)》 >> 2017年 第11卷 第1期 doi: 10.1007/s11708-016-0442-6
Statistical analysis of recombination properties of the boron-oxygen defect in p-type Czochralski silicon
School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW 2052, Australia
摘要
关键词
Czochralski silicon ; boron-oxygen defect ; injection dependent lifetime spectroscopy ; goodness-of-fit ; repeatability error
正文