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Preparation of TiO

Shenghung WANG, Kuohua WANG, Jihmirn JEHNG, Lichen LIU

《环境科学与工程前沿（英文）》 2012年 第6卷 第3期   页码 304-312 doi: 10.1007/s11783-010-0297-8

摘要： Titanium dioxide is coated on the surface of MCM-41 wafer through the plasma enhanced chemical vapor deposition (PECVD) method using titanium isopropoxide (TTIP) as a precursor. Annealing temperature is a key factor affecting crystal phase of titanium dioxide. It will transform an amorphous structure to a polycrystalline structure by increasing temperature. The optimum anatase phase of TiO which can acquire the best methanol conversion under UV-light irradiation is obtained under an annealing temperature of 700°C for 2 h, substrate temperature of 500°C, 70 mL·min of oxygen flow rate, and 100 W of plasma power. In addition, the films are composed of an anatase-rutile mixed phase, and the ratio of anatase to rutile varies with substrate temperature and oxygen flow rate. The particle sizes of titanium dioxide are between 30.3 nm and 59.9 nm by the calculation of Scherrer equation. Under the reaction conditions of 116.8 mg·L methanol, 2.9 mg·L moisture, and 75°C of reaction temperature, the best conversion of methanol with UV-light is 48.2% by using the anatase-rutile (91.3/8.7) mixed phase TiO in a batch reactor for 60 min. While under fluorescent light irradiation, the best photoactivity appears by using the anatase-rutile (55.4/44.6) mixed phase TiO with a conversion of 40.0%.

关键词： photocatalyst     titanium dioxide     MCM-41     plasma enhanced chemical vapor deposition (PECVD)    

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The role of ions in plasma catalytic carbon nanotube growth: A review

Erik C. Neyts

《化学科学与工程前沿（英文）》 2015年 第9卷 第2期   页码 154-162 doi: 10.1007/s11705-015-1515-5

摘要： While it is well-known that the plasma-enhanced catalytic chemical vapor deposition (PECVD) of carbon nanotubes (CNTs) offers a number of advantages over thermal CVD, the influence of the various individual contributing factors is not well understood. Especially the role of ions is unclear, since ions in plasmas are generally associated with sputtering rather than with growing a material. Even so, various studies have demonstrated the beneficial effects of ion bombardment during the growth of CNTs. This review looks at the role of the ions in plasma-enhanced CNT growth as deduced from both experimental and simulation studies. Specific attention is paid to the beneficial effects of ion bombardment. Based on the available literature, it can be concluded that ions can be either beneficial or detrimental for carbon nanotube growth, depending on the exact conditions and the control over the growth process.

关键词： plasma-enhanced chemical vapor deposition (PECVD)     carbon nanotube (CNT)     ion bombardment     defect healing    

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Plasma enhanced chemical vapor deposition of excellent a-Si:H passivation layers for a-Si:H/c-Si heterojunction solar cells at high pressure and high power

Lei ZHAO,Wenbin ZHANG,Jingwei CHEN,Hongwei DIAO,Qi WANG,Wenjing WANG

《能源前沿（英文）》 2017年 第11卷 第1期   页码 85-91 doi: 10.1007/s11708-016-0437-3

摘要： The intrinsic a-Si:H passivation layer inserted between the doped a-Si:H layer and the c-Si substrate is very crucial for improving the performance of the a-Si:H/c-Si heterojunction (SHJ) solar cell. The passivation performance of the a-Si:H layer is strongly dependent on its microstructure. Usually, the compact a-Si:H deposited near the transition from the amorphous phase to the nanocrystalline phase by plasma enhanced chemical vapor deposition (PECVD) can provide excellent passivation. However, at the low deposition pressure and low deposition power, such an a-Si:H layer can be only prepared in a narrow region. The deposition condition must be controlled very carefully. In this paper, intrinsic a-Si:H layers were prepared on n-type Cz c-Si substrates by 27.12 MHz PECVD at a high deposition pressure and high deposition power. The corresponding passivation performance on c-Si was investigated by minority carrier lifetime measurement. It was found that an excellent a-Si:H passivation layer could be obtained in a very wide deposition pressure and power region. Such wide process window would be very beneficial for improving the uniformity and the yield for the solar cell fabrication. The a-Si:H layer microstructure was further investigated by Raman and Fourier transform infrared (FTIR) spectroscopy characterization. The correlation between the microstructure and the passivation performance was revealed. According to the above findings, the a-Si:H passivation performance was optimized more elaborately. Finally, a large-area SHJ solar cell with an efficiency of 22.25% was fabricated on the commercial 156 mm pseudo-square n-type Cz c-Si substrate with the open-circuit voltage ( ) of up to 0.732 V.

关键词： PECVD     high pressure and high power     a-Si:H microstructure     passivation     heterojunction solar cell    

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标题 作者 时间 类型 操作

Preparation of TiO

Shenghung WANG, Kuohua WANG, Jihmirn JEHNG, Lichen LIU

期刊论文

The role of ions in plasma catalytic carbon nanotube growth: A review

Erik C. Neyts

期刊论文

Plasma enhanced chemical vapor deposition of excellent a-Si:H passivation layers for a-Si:H/c-Si heterojunction solar cells at high pressure and high power

Lei ZHAO,Wenbin ZHANG,Jingwei CHEN,Hongwei DIAO,Qi WANG,Wenjing WANG

期刊论文