POCl<sub>3</sub> diffusion for industrial Si solar cell emitter formation

2017, Volume 11, Issue 1

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Frontiers in Energy >> 2017, Volume 11, Issue 1 doi: 10.1007/s11708-016-0433-7

POCl₃ diffusion for industrial Si solar cell emitter formation

School of Photovoltaic and Renewable Energy Engineering, UNSW Australia, Sydney, NSW 2052, Australia

Accepted: 2016-11-08 Available online: 2016-11-16

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Abstract

POCl diffusion is currently the standard method for industrial n-type emitter fabrication. In this study, we present the impact of the following processing parameters on emitter formation and electrical performance: deposition gas flow ratio, drive-in temperature and duration, drive-in O flow rate, and thermal oxidation temperature. By showing their influence on the emitter doping profile and recombination activity, we provide an overall strategy for improving industrial POCl tube diffused emitters.

Keywords

POCl₃ diffusion ; emitter recombination ; oxidation ; silicon

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