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2016, Volume 17, Issue 10

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Frontiers of Information Technology & Electronic Engineering >> 2016, Volume 17, Issue 10 doi: 10.1631/FITEE.1500214

Design and analysis of carbon nanotube FET based quaternary full adders

. Faculty of Electrical Engineering, Shahid Beheshti University, Tehran 1983963113, Iran.. Nanotechnology and Quantum Computing Lab, Shahid Beheshti University, Tehran 1983963113, Iran

Available online: 2016-11-04
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Abstract

CMOS binary logic is limited by short channel effects, power density, and interconnection restrictions. The effective solution is non-silicon multiple-valued logic (MVL) computing. This study presents two high-performance quaternary full adder cells based on carbon nanotube field effect transistors (CNTFETs). The proposed designs use the unique properties of CNTFETs such as achieving a desired threshold voltage by adjusting the carbon nanotube diameters and having the same mobility as p-type and n-type devices. The proposed circuits were simulated under various test conditions using the Synopsys HSPICE simulator with the 32 nm Stanford comprehensive CNTFET model. The proposed designs have on average 32% lower delay, 68% average power, 83% energy consumption, and 77% static power compared to current state-of-the-art quaternary full adders. Simulation results indicated that the proposed designs are robust against process, voltage, and temperature variations, and are noise tolerant.

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