Abstract
We propose and fabricate a monolithic optical interconnect ona GaN-on-silicon platform using a wafer-level technique. Because theInGaN/GaN multiple-quantum-well diodes (MQWDs) can achieve light emissionand detection simultaneously, the emitter and collector sharing identicalMQW structure are produced using the same process. Suspended waveguidesinterconnect the emitter with the collector to form in-plane lightcoupling. Monolithic optical interconnect chip integrates the emitter,waveguide, base, and collector into a multi-component system witha common base. Output states superposition and 1×2 in-planelight communication are experimentally demonstrated. The proposedmonolithic optical interconnect opens a promising way toward the diverseapplications from in-plane visible light communication to light-inducedartificial synaptic devices, intelligent display, on-chip imaging,and optical sensing.