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Frontiers of Information Technology & Electronic Engineering >> 2019, Volume 20, Issue 4 doi: 10.1631/FITEE.1800482

Heterogeneous III-V silicon photonic integration: components and characterization

1. School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
2. Center for Information Photonics and Communications, School of Information Science and Technology, Southwest Jiaotong University, Chengdu 610031, China

Available online: 2019-06-05

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Abstract

Heterogeneous III-V silicon (Si) photonic integration is considered one of the key methods for realizing power- and cost-effective optical interconnections, which are highly desired for future high-performance computers and datacenters. We review the recent progress in heterogeneous III-V/Si photonic integration, including transceiving devices and components. We also describe the progress in the on-wafer characterization of photonic integration circuits, especially on the heterogeneous III-V/Si platform.

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