Periodically varied initial offset boosting behaviors in a memristive system with cosine memductance

2019, Volume 20, Issue 12

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Frontiers of Information Technology & Electronic Engineering >> 2019, Volume 20, Issue 12 doi: 10.1631/FITEE.1900360

Periodically varied initial offset boosting behaviors in a memristive system with cosine memductance

School of Information Science and Engineering, Changzhou University, Changzhou 213164, China

Available online: 2020-03-05

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Abstract

A four-dimensional memristive system is constructed using a novel ideal memristor with cosine memductance. Due to the special memductance nonlinearity, this memristive system has a line equilibrium set (0, 0, 0, δ) located along the coordinate of the inner state variable of the memristor, whose stability is periodically varied with a change of δ. Nonlinear and one-dimensional initial offset boosting behaviors, which are triggered by not only the initial condition of the memristor but also other two initial conditions, are numerically uncovered. Specifically, a wide variety of coexisting attractors with different positions and topological structures are revealed along the boosting route. Finally, circuit simulations are performed by Power SIMulation (PSIM) to confirm the unique dynamical features.

Keywords

Initial offset boosting ; Memristive system ; Memductance ; Line equilibrium set

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