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《机械工程前沿(英文)》 >> 2006年 第1卷 第2期 doi: 10.1007/s11465-006-0014-2

A nano-scale alignment method for imprint lithography

The State-key Lab of Manufacturing Systems Engineering, Xi′an Jiaotong University, Xi′an 710049, China;

发布日期: 2006-06-05

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摘要

A novel nano-scale alignment technique based on moiré signal for room-temperature imprint lithography in the submicron realm is proposed. The moiré signals generated by two pairs of quadruple gratings on mold and wafer are optically projected onto two photo-detector arrays, then the detected moiré signals are used to estimate the alignment errors in the x and y directions. The experiment results indicate that complex differential moiré signal is sensitive to relative displacement of the mold and wafer, and the alignment accuracy obtained in the x and γ directions and in θ are 20 nm , 25 nm and 1 μrad (3σ), respectively. They can meet the requirements of alignment accuracy for submicron imprint lithography.

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