摘要
A novel nano-scale alignment technique based on moiré signal for room-temperature imprint lithography in the submicron realm is proposed. The moiré signals generated by two pairs of quadruple gratings on mold and wafer are optically projected onto two photo-detector arrays, then the detected moiré signals are used to estimate the alignment errors in the x and y directions. The experiment results indicate that complex differential moiré signal is sensitive to relative displacement of the mold and wafer, and the alignment accuracy obtained in the x and γ directions and in θ are 20 nm , 25 nm and 1 μrad (3σ), respectively. They can meet the requirements of alignment accuracy for submicron imprint lithography.