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2008年 第3卷 第3期

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《机械工程前沿（英文）》 >> 2008年 第3卷 第3期 doi: 10.1007/s11465-008-0036-z

Growth and properties analysis of metal-organic chemical vapor deposited MgZnO films on -AlO substrates

1.State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University; 2.Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, National Analytical Research Center of Electrochemistry and Spectroscopy;

发布日期： 2008-09-05
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MgZnO (0 < ? 0.12) thin films with the wurtzite structure have been successfully grown on -AlO substrates by metal-organic chemical vapor deposition (MOCVD). X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), photoluminescence (PL) spectrometry, and transmission measurements are performed to study the characteristics of MgZnO thin films. Results show that with increasing Mg content, the diffraction peak of MgZnO thin films shifts towards a higher diffraction angle (the biggest shift is 0.22°), and the full width at half maximum (FWHM) of the diffraction peak is broadened. Meanwhile, a blue-shift occurs at the near-band-edge (NBE) emission peak and the largest blue-shift of the band gap of the MgZnO films is 113 meV with Mg content = 0.12. Therefore, the energy band gap of the MgZnO films is determined by Mg content in the thin films and the energy band gap increases with an increase of Mg content.

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