Frontiers of Mechanical Engineering
>> 2006,
Volume 1,
Issue 2
doi:
10.1007/s11465-006-0011-5
The electrostatic-alloy bonding technique used in MEMS
MEMS Center, Harbin Institute of Technology, Harbin 150001, China
Available online: 2006-06-05
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Abstract
Electrostatic-alloy bonding of silicon wafer with glass deposited by Au to form Si/Au-glass water, and bonding of Si/Au-glass with silicon wafer were researched during fabrication of pressure sensors. The silicon wafer and glass wafer with an Au film resistor were bonded by electrostatic bonding, and then Si-Au alloy bonding was formed by annealing at 400vH for 2 h. The air sealability of the cavity after bonding was finally tested using the N filling method. The results indicate that large bond strength was obtained at the bonding interface. This process was used in fabricating a pressure sensor with a sandwich structure. The results indicate that the sensor presented better performances and that the bonding techniques can be used in MEMS packaging.
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