具有单轴面内各向异性的非晶Sm-Co薄膜在信息存储和自旋电子学领域中都具有广阔的应用前景。产生单轴面内各向异性的最有效方法是在薄膜沉积过程中施加面内磁场。然而，这种方法通常需要复杂的设备。本文中，我们报道了一种产生单轴面内各向异性的新方法，只需要将非晶Sm-Co薄膜生长在(011)取向的单晶衬底上，薄膜生长过程中不需要施加任何外部磁场。薄膜的各向异性常数k_A随衬底晶格常数的变化而变化。生长在LaAlO₃ (011)衬底上的非晶Sm-Co薄膜的各向异性常数k_A高达3.3×10⁴ J·m⁻³。详细分析表明，衬底各向异性应变引起的铁磁畴的择优生长，以及薄膜中Sm-Co、Co-Co取向对的有序化，在非晶Sm-Co薄膜单轴面内各向异性的产生上起到了重要作用。这项工作为在非晶Sm-Co薄膜中获得单轴面内各向异性提供了一种新方法。

Amorphous Sm–Co films with uniaxial in-plane anisotropy have great potential for application in informationstorage media and spintronic materials. The most effective method to produce uniaxial in-plane anisotropy is to apply an in-plane magnetic field during deposition. However, this method inevitably requires more complex equipment. Here, we report a new way to produce uniaxial in-plane anisotropy by growing amorphous Sm–Co films onto (011)-cut single-crystal substrates in the absence of an external magnetic field. The tunable anisotropy constant, k_A, is demonstrated with variation in the lattice parameter of the substrates. A k_A value as high as about 3.3 × 10⁴ J·m⁻³ was obtained in the amorphous Sm–Co film grown on a LaAlO₃(011) substrate. Detailed analysis indicated that the preferential seeding and growth of ferromagnetic (FM) domains caused by the anisotropic strain of the substrates, along with the formed Sm–Co, Co–Co directional pair ordering, exert a substantial effect. This work provides a new way to obtain in-plane anisotropy in amorphous Sm–Co films.