在本文中，我们利用了高光谱高分辨率光致发光映射技术，这是一个强大的工具，可用于选择和优化在Cu(In_x,Ga_1-x)Se₂（CIGS）模块上对子电池进行图案化互连的激光烧蚀工艺。通过这种方式，我们可以完成对消融区域附近材料降解的深度监测以及对潜在机制的识别。具体而言，通过分析在CIGS沉积之前烧蚀的标准P1图案线，我们发现了沿着下部的钼槽边缘的异常发射猝灭效应。通过扫描电子显微镜（SEM）比较了P1边缘的横截面的形貌，我们进一步合理化产生这种效应的起因，但无法用厚度变化解释光发射的减少。我们还研究了激光诱导对CIGS沉积后的P1图案线带来的损伤。然后，我们首次记录了短距离损坏区域，该区域与在激光路径上应用的光学孔径无关。我们的发现能更好地理解P1引起的功率损耗，并为改进与行业相关的模块互连方案提供了新的见解。

In this report, we show that hyperspectral high-resolution photoluminescence mapping is a powerful tool for the selection and optimiz1ation of the laser ablation processes used for the patterning interconnections of subcells on Cu(In_x,Ga_1-x)Se₂ (CIGS) modules. In this way, we show that in-depth monitoring of material degradation in the vicinity of the ablation region and the identification of the underlying mechanisms can be accomplished. Specifically, by analyzing the standard P1 patterning line ablated before the CIGS deposition, we reveal an anomalous emission-quenching effect that follows the edge of the molybdenum groove underneath. We further rationalize the origins of this effect by comparing the topography of the P1 edge through a scanning electron microscope (SEM) cross-section, where a reduction of the photoemission cannot be explained by a thickness variation. We also investigate the laser-induced damage on P1 patterning lines performed after the deposition of CIGS. We then document, for the first time, the existence of a short-range damaged area, which is independent of the application of an optical aperture on the laser path. Our findings pave the way for a better understanding of P1-induced power losses and introduce new insights into the improvement of current strategies for industry-relevant module interconnection schemes.