
一种促进低温快速沉积Cu(In,Ga)Se2薄膜生长的单加热克努森蒸发源的改良设计
Yunxiang Zhang, Shuping Lin, Shiqing Cheng, Zhichao He, Zhaojing Hu, Zhiqiang Zhou, Wei Liu *, Yun Sun
工程(英文) ›› 2021, Vol. 7 ›› Issue (4) : 534-541.
一种促进低温快速沉积Cu(In,Ga)Se2薄膜生长的单加热克努森蒸发源的改良设计
Boosting Cu(In,Ga)Se2 Thin Film Growth in Low-Temperature Rapid-Deposition Processes: An Improved Design for the Single-Heating Knudsen Cell
在共蒸发工艺中,克努森蒸发源经常被用来生长高质量Cu(In,Ga)Se2(CIGS)薄膜。然而,在整个薄膜沉积过程中(尤其在低温工艺下),传统单加热克努森蒸发源不能使金属完全硒化,这可能是由蒸发源坩埚喷嘴处的冷凝和液滴喷射现象造成的。本文将通过热力学分析解释这一现象,同时提出了一种新型单加热克努森蒸发源来解决这一问题。与传统低温快速沉积工艺相比,新型单加热蒸发源提高了薄膜质量,并在230 nm·min–1的生长速率下,将器件相对效率提高了29%。
The Knudsen effusion cell is often used to grow high-quality Cu(In,Ga)Se2 (CIGS) thin film in coevaporation processes. However, the traditional single-heating Knudsen effusion cell cannot deliver complete metal selenides during the whole deposition process, particularly for a low-temperature deposition process, which is probably due to the condensation and droplet ejection at the nozzle of the crucible. In this study, thermodynamics analysis is conducted to decipher the reason for this phenomenon. Furthermore, a new single-heating Knudsen effusion is proposed to solve this difficult problem, which leads to an improvement in the quality of CIGS film and a relative increase in conversion efficiency of 29% at a growth rate of about 230 nm·min−1 , compared with the traditional efficiency in a lowtemperature rapid-deposition process.
Cu(In / Ga)Se2 / 克努森蒸发源 / 凝结 / 液滴喷射 / 低温
Cu(In / Ga)Se2 / Knudsen effusion cell / Condensation / Droplet ejection / Low temperature
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