基于自解耦三明治结构的横向运动栅场效应晶体管微机电系统微力传感器

Wendi Gao, Zhixia Qiao, Xiangguang Han, Xiaozhang Wang, Adnan Shakoor, Cunlang Liu, Dejiang Lu, Ping Yang, Libo Zhao, Yonglu Wang, Jiuhong Wang, Zhuangde Jiang, Dong Sun

工程(英文) ›› 2023, Vol. 21 ›› Issue (2) : 61-74.

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工程(英文) ›› 2023, Vol. 21 ›› Issue (2) : 61-74. DOI: 10.1016/j.eng.2022.06.018
研究论文
Article

基于自解耦三明治结构的横向运动栅场效应晶体管微机电系统微力传感器

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A MEMS Micro Force Sensor Based on a Laterally Movable Gate Field-Effect Transistor (LMGFET) with a Novel Decoupling Sandwich Structure

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摘要

本文介绍了一种基于横向运动栅极场效应晶体管(LMGFET)的新型微型力传感器。文中提出了一种用于小型LMGFET器件性能评估的电气模型,与以前的模型相比,其具有更高精度。由此设计了一种新型的三明治夹层结构,该结构由跨轴解耦Au-栅极阵列层和两个柔性光刻胶SU-8 层组成。通过所提出的双差分传感布置,LMGFET工作时受垂直干扰产生的输出电流被大大消除,所提出传感器的相对输出误差从4.53%(传统差分结构)降低到0.01%。本文还为所提出的传感器开发和模拟了一个可行的制造工艺过程。基于LMGFET的力传感器的灵敏度为4.65 μA∙nN−1,可与垂直可动栅极场效应晶体管(VMGFET)器件相媲美,器件的非线性度提高了0.78%,测量范围扩大为±5.10 μN。上述分析能够为LMGFET器件的电气和结构参数提供全面的设计优化指导,并证明了所提出的传感器在生物医学显微操作应用中具有出色的力传感潜力。

Abstract

This paper presents the development of a novel micro force sensor based on a laterally movable gate field-effect transistor (LMGFET). A precise electrical model is proposed for the performance evaluation of small-scale LMGFET devices and exhibits improved accuracy in comparison with previous models. A novel sandwich structure consisting of a gold cross-axis decoupling gate array layer and two soft photoresistive SU-8 layers is utilized. With the proposed dual-differential sensing configuration, the output current of the LMGFET lateral operation under vertical interference is largely eliminated, and the relative output error of the proposed sensor decreases from 4.53% (traditional differential configuration) to 0.01%. A practicable fabrication process is also developed and simulated for the proposed sensor. The proposed LMGFET-based force sensor exhibits a sensitivity of 4.65 µA·nN−1, which is comparable with vertically movable gate field-effect transistor (VMGFET) devices, but has an improved nonlinearity of 0.78% and a larger measurement range of ±5.10 µN. These analyses provide a comprehensive design optimization of the electrical and structural parameters of LMGFET devices and demonstrate the proposed sensor's excellent force-sensing potential for biomedical micromanipulation applications.

关键词

微力传感器 / 横向运动栅极 / 场效应管 / 柔性光刻胶SU-8 / 生物医学显微操作

Keywords

Force sensor / Laterally movable gate / Field-effect transistor / Photoresistive SU-8 / Biomedical micromanipulation

引用本文

导出引用
Wendi Gao, Zhixia Qiao, Xiangguang Han. 基于自解耦三明治结构的横向运动栅场效应晶体管微机电系统微力传感器. Engineering. 2023, 21(2): 61-74 https://doi.org/10.1016/j.eng.2022.06.018

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