利用自旋电子存储器实现物理不可克隆功能芯片的实验验证

Engineering ›› 2025, Vol. 49 ›› Issue (6) : 141 -148. DOI: 10.1016/j.eng.2024.12.028

研究论文

作者信息 +

Experimental Realization of Physical Unclonable Function Chip Utilizing Spintronic Memories

Author information +

文章历史 +

PDF

Abstract

In recent years, physical unclonable function (PUF) has emerged as a lightweight solution in the Internet of Things security. However, conventional PUFs based on complementary metal oxide semiconductor (CMOS) present challenges such as insufficient randomness, significant power and area overhead, and vulnerability to environmental factors, leading to reduced reliability. In this study, we realize a strong, highly reliable and reconfigurable PUF with resistance against machine-learning attacks in a 1 kb spin-orbit torque magnetic random access memory fabricated using a 180 nm CMOS process. This strong PUF achieves a challenge–response pair capacity of 10⁹ through a computing-in-memory approach. The results demonstrate that the proposed PUF exhibits near-ideal performance metrics: 50.07% uniformity, 50% diffuseness, 49.89% uniqueness, and a bit error rate of 0%, even in a 375 K environment. The reconfigurability of PUF is demonstrated by a reconfigurable Hamming distance of 49.31% and a correlation coefficient of less than 0.2, making it difficult to extract output keys through side-channel analysis. Furthermore, resistance to machine-learning modeling attacks is confirmed by achieving an ideal accuracy prediction of approximately 50% in the test set.

关键词

Key words

Physical unclonable function / Spin-orbit torque magnetic random access memory / Computing-in-memory / Reconfigurability / Machine-learning attack

引用本文

引用格式 ▾

Xiuye Zhang,Chuanpeng Jiang,Jialiang Yin,Daoqian Zhu,Shiqi Wang,Sai Li,Zhongxiang Zhang,Ao Du,Wenlong Cai,Hongxi Liu,Kewen Shi,Kaihua Cao,Zhaohao Wang,Weisheng Zhao. 利用自旋电子存储器实现物理不可克隆功能芯片的实验验证[J]. 工程（英文）, 2025, 49(6): 141-148 DOI:10.1016/j.eng.2024.12.028