基于扩散型忆阻器交叉阵列的概率贝叶斯机用于长序列推理

Yining Jiang ,  Hanzhi Ma ,  Yongqin Bai ,  Xun Han ,  Ye Shi ,  Jose Schutt-Aine ,  Yang Xu ,  Er-Ping Li

工程(英文) ›› 2026, Vol. 64 ›› Issue (9) : 156 -168.

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工程(英文) ›› 2026, Vol. 64 ›› Issue (9) : 156 -168. DOI: 10.1016/j.eng.2026.07.011
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基于扩散型忆阻器交叉阵列的概率贝叶斯机用于长序列推理

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A Probabilistic Bayesian Machine Based on a Diffusive Memristor Crossbar Array for Long Sequence Inference

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Abstract

The current Von-Neumann architecture cannot support emerging applications in artificial intelligence, necessitating a new computing paradigm that can solve complex tasks. Memristor-based near-memory computing demonstrates the potential beyond Von-Neumann computers. However, due to device limitations, memristor-based hardware with bulky peripheral circuits cannot handle complex tasks and is sensitive to noise. In this study, we leverage the physical stochasticity of a diffusive device and the inherent parallelism of the crossbar structure to implement a true stochastic Bayesian machine based on an Au/Ag/Al2O3/Pt/Ti memristor crossbar array circuit. The proposed system supports long probabilistic sequence inference with superior soft-error robustness and enables probabilistic hardware to handle high-feature tasks such as image recognition for the first time. We have constructed a diffusive memristor device with the corresponding compact model and measured the signal-transmission characteristics of the crossbar array prototype circuit, revealing severe signal distortion due to parasitic effects. Moreover, we propose a signal-reconstruction method that effectively improves the performance of Bayesian machine circuits. Our work points to new directions for exploring circuit design and large-scale integration methods in probabilistic computing hardware.

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Probabilistic computing / Diffusive memristor / Bayesian machine / Long sequence inference / Soft-error robustness

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Yining Jiang,Hanzhi Ma,Yongqin Bai,Xun Han,Ye Shi,Jose Schutt-Aine,Yang Xu,Er-Ping Li. 基于扩散型忆阻器交叉阵列的概率贝叶斯机用于长序列推理[J]. 工程(英文), 2026, 64(9): 156-168 DOI:10.1016/j.eng.2026.07.011

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