用传统实验方法绘制材料相图，需要分别研究各个成分在一系列温度下的成相情况，这通常要汇集多个研究小组多年努力的成果。以高通量制备与表征为特征的组合材料芯片技术能够在一个覆盖完整成分分布的材料样品库上，测定某一温度下二元或三元材料体系的相图，显著提升了研究效率。但要完成整个温度区间的材料相图，仍需对多个材料样品库在一系列不同的温度下进行热处理。本文提出了一种'单芯片方法'， 即通过渐进的能量脉冲将组合材料芯片中某一微区独立地自低向高加热至不同温度，同时原位实时地监测这一微区在温度变化过程中的物相演化，从而获得该微区成分在完整温度区间内的物相信息。对组合材料芯片上各个微区分别独立地逐一重复该过程，就可以在一个组合材料芯片上通过一次实验构建出完整的二元或三元相图。我们采用'单芯片方法'测定了Ge-Sb-Te 三元合金体系非晶相与结晶相的相界，验证了这种方法的可行性。

Conventionally, an experimentally determined phase diagram requires studies of phase formation at a range of temperatures for each composition, which takes years of effort from multiple research groups. Combinatorial materials chip technology, featuring high-throughput synthesis and characterization, is able to determine the phase diagram of an entire composition spread of a binary or ternary system at a single temperature on one materials library, which, though significantly increasing efficiency, still requires many libraries processed at a series of temperatures in order to complete a phase diagram. In this paper, we propose a "one-chip method" to construct a complete phase diagram by individually synthesizing each pixel step by step with a progressive pulse of energy to heat at different temperatures while monitoring the phase evolution on the pixel in situ in real time. Repeating this process pixel by pixel throughout the whole chip allows the entire binary or ternary phase diagram to be mapped on one chip in a single experiment. The feasibility of this methodology is demonstrated in a study of a Ge-Sb-Te ternary alloy system, on which the amorphous-crystalline phase boundary is determined.