8英寸绝缘栅双极型晶体管 (IGBT) 关键技术研究
Development of 8-inch Key Processes for Insulated-Gate Bipolar Transistor
基于8英寸绝缘栅双极型晶体管 (IGBT) 生产线的建设,重点解决了8英寸IGBT先进工艺技术、第四代高压双扩散金属氧化物半导体 (DMOS+) IGBT技术和第五代沟槽栅IGBT技术等关键技术问题,实现了高压IGBT芯片制造从6英寸到8英寸的技术突破,自主开发的1600 A/1.7 kV与1500 A/3.3 kV IGBT模块已经被成功制造并通过考核,现已应用于轨道交通牵引系统。
Based on the construction of the 8-inch fabrication line, advanced process technology of 8-inch wafer, as well as the fourth-generation high-voltage double-diffused metal-oxide semiconductor (DMOS+) insulated-gate bipolar transistor (IGBT) technology and the fifth-generation trench gate IGBT technology, have been developed, realizing a great-leap forward technological development for the manufacturing of high-voltage IGBT from 6-inch to 8-inch. The 1600 A/1.7 kV and 1500 A/3.3 kV IGBT modules have been successfully fabricated, qualified, and applied in rail transportation traction system.
绝缘栅双极型晶体管 (IGBT) / 高功率密度 / 沟槽栅 / 8英寸 / 轨道交通
insulated-gate bipolar transistor (IGBT) / high power density / trench gate / 8-inch / rail transportation
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