The development and application of silicon Neutron Transmutation Doping (NTD) technology in China

Qiao Chenyang, Sun Zhiyong, Ke Guotu, Lu Cungang, Shen Feng, Chen Huiqiang

中国工程科学 ›› 2009, Vol. 11 ›› Issue (4) : 95 -100.

Qiao Chenyang, Sun Zhiyong, Ke Guotu, Lu Cungang, Shen Feng, Chen Huiqiang

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The development and application of silicon Neutron Transmutation Doping (NTD) technology in China

Qiao Chenyang, Sun Zhiyong, Ke Guotu, Lu Cungang, Shen Feng, Chen Huiqiang

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摘要

The research and development history of silicon Neutron Transmutation Doping (NTD) technology and its applications at home and abroad are introduced in this paper. The advantages of NTD, compared with conventional technology of doping, are narrated. The principle of NTD as well as the implementation of the main procedures related to Si NTD is explained. The market demand tendency is prospected, and the advanced measures on NTD quality control are described.

Abstract

关键词

monocrystal silicon / Neutron Transmutation Doing (NTD) / uniformity / doping accuracy / application / design

Key words

monocrystal silicon / Neutron Transmutation Doing (NTD) / uniformity / doping accuracy / application / design

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Qiao Chenyang, Sun Zhiyong, Ke Guotu, Lu Cungang, Shen Feng, Chen Huiqiang. The development and application of silicon Neutron Transmutation Doping (NTD) technology in China[J]. 中国工程科学, 2009, 11(4): 95-100 DOI: