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《信息与电子工程前沿(英文)》 >> 2015年 第16卷 第8期 doi: 10.1631/FITEE.1500102
Design of a novel RTD-based three-variable universal logic gate
1. Hangzhou Institute of Service Engineering, Hangzhou Normal University, Hangzhou 311121, China.2. College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou 310027, China
摘要
关键词
Resonant tunneling diode (RTD) ; Threshold logic gate ; Reed-Muller expansion ; Universal logic gate
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