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Effects of nano-silicon and common silicon on lead uptake and translocation in two rice cultivars

Jianguo LIU,Hui CAI,Congcong MEI,Mingxin WANG

《环境科学与工程前沿（英文）》 2015年 第9卷 第5期   页码 905-911 doi: 10.1007/s11783-015-0786-x

摘要： The current study investigated the effects of nano-silicon (Si) and common Si on lead (Pb) toxicity, uptake, translocation, and accumulation in the rice cultivars Yangdao 6 and Yu 44 grown in soil containing two different Pb levels (500 mg·kg and 1000 mg·kg ). The results showed that Si application alleviated the toxic effects of Pb on rice growth. Under soil Pb treatments of 500 and 1000 mg·kg , the biomasses of plants supplied with common Si and nano-Si were 1.8%–5.2% and 3.3%–11.8% higher, respectively, than those of plants with no Si supply (control). Compared to the control, Pb concentrations in rice shoots supplied with common Si and nano-Si were reduced by 14.3%–31.4% and 27.6%–54.0%, respectively. Pb concentrations in rice grains treated with common Si and nano-Si decreased by 21.3%–40.9% and 38.6%–64.8%, respectively. Pb translocation factors (TFs) from roots to shoots decreased by 15.0%–29.3% and 25.6%–50.8%, respectively. The TFs from shoots to grains reduced by 8.3%–13.7% and 15.3%–21.1%, respectively, after Si application. The magnitudes of the effects observed on plants decreased in the following order: nano-Si treatment>common Si treatment and high-grain-Pb-accumulating cultivar (Yangdao 6)>low-grain-Pb-accumulating cultivar (Yu 44) and heavy Pb stress (1000 mg·kg )>moderate Pb stress (500 mg·kg )>no Pb treatment. The results of the study indicate that nano-Si is more efficient than common Si in ameliorating the toxic effects of Pb on rice growth, preventing Pb transfer from rice roots to aboveground parts, and blocking Pb accumulation in rice grains, especially in high-Pb-accumulating rice cultivars and in heavily Pb-polluted soils.

关键词： silicon (Si)     lead (Pb)     rice (Oryza sativa L.)     toxicity     accumulation    

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Ultrathin microcrystalline hydrogenated Si/Ge alloyed tandem solar cells towards full solar spectrum

Yu Cao, Xinyun Zhu, Xingyu Tong, Jing Zhou, Jian Ni, Jianjun Zhang, Jinbo Pang

《化学科学与工程前沿（英文）》 2020年 第14卷 第6期   页码 997-1005 doi: 10.1007/s11705-019-1906-0

摘要： Thin film solar cells have been proved the next generation photovoltaic devices due to their low cost, less material consumption and easy mass production. Among them, micro-crystalline Si and Ge based thin film solar cells have advantages of high efficiency and ultrathin absorber layers. Yet individual junction devices are limited in photoelectric conversion efficiency because of the restricted solar spectrum range for its specific absorber. In this work, we designed and simulated a multi-junction solar cell with its four sub-cells selectively absorbing the full solar spectrum including the ultraviolet, green, red as well as near infrared range, respectively. By tuning the Ge content, the record efficiency of 24.80% has been realized with the typical quadruple junction structure of a-Si:H/a-Si Ge :H/µc-Si:H/µc-Si Ge :H. To further reduce the material cost, thickness dependent device performances have been conducted. It can be found that the design of total thickness of 4 m is the optimal device design in balancing the thickness and the . While the design of ultrathin quadruple junction device with total thickness of 2 m is the optimized device design regarding cost and long-term stability with a little bit more reduction in . These results indicated that our solar cells combine the advantages of low cost and high stability. Our work may provide a general guidance rule of utilizing the full solar spectrum for developing high efficiency and ultrathin multi-junction solar cells.

关键词： thin films     solar cells     quadruple junction solar cell     amorphous silicon     silicon germanium alloy     quantum efficiency    

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Enhancing the photoelectrochemical performance of p-silicon through TiO coating decorated with mesoporous

《能源前沿（英文）》 2021年 第15卷 第3期   页码 772-780 doi: 10.1007/s11708-021-0783-7

摘要： MoS2 is a promising electrocatalyst for hydrogen evolution reaction and a good candidate for cocatalyst to enhance the photoelectrochemical (PEC) performance of Si-based photoelectrode in aqueous electrolytes. The main challenge lies in the optimization of the microstructure of MoS2, to improve its catalytic activity and to construct a mechanically and chemically stable cocatalyst/Si photocathode. In this paper, a highly-ordered mesoporous MoS2 was synthesized and decorated onto a TiO2 protected p-silicon substrate. An additional TiO2 necking was introduced to strengthen the bonding between the MoS2 particles and the TiO2 layer. This meso-MoS2/TiO2/p-Si hybrid photocathode exhibited significantly enhanced PEC performance, where an onset potential of +0.06 V (versus RHE) and a current density of −1.8 mA/cm2 at 0 V (versus RHE) with a Faradaic efficiency close to 100% was achieved in 0.5 mol/L H2SO4. Additionally, this meso-MoS2/TiO2/p-Si photocathode showed an excellent PEC ability and durability in alkaline media. This paper provides a promising strategy to enhance and protect the photocathode through high-performance surface cocatalysts.

关键词： photoelectrocatalysis     hydrogen evolution     Si photocathode     mesoporous MoS2    

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High-quality industrial n-type silicon wafers with an efficiency of over 23% for Si heterojunction solar

Fanying MENG,Jinning LIU,Leilei SHEN,Jianhua SHI,Anjun HAN,Liping ZHANG,Yucheng LIU,Jian YU,Junkai ZHANG,Rui ZHOU,Zhengxin LIU

《能源前沿（英文）》 2017年 第11卷 第1期   页码 78-84 doi: 10.1007/s11708-016-0435-5

摘要： n-type CZ-Si wafers featuring longer minority carrier lifetime and higher tolerance of certain metal contamination can offer one of the best Si-based solar cells. In this study, Si heterojuction (SHJ) solar cells which was fabricated with different wafers in the top, middle and tail positions of the ingot, exhibited a stable high efficiency of>22% in spite of the various profiles of the resistivity and lifetime, which demonstrated the high material utilization of n-type ingot. In addition, for effectively converting the sunlight into electrical power, the pyramid size, pyramid density and roughness of surface of the Cz-Si wafer were investigated by scanning electron microscope (SEM) and transmission electron microscope (TEM). Furthermore, the dependence of SHJ solar cell open-circuit voltage on the surface topography was discussed, which indicated that the uniformity of surface pyramid helps to improve the open-circuit voltage and conversion efficiency. Moreover, the simulation revealed that the highest efficiency of the SHJ solar cell could be achieved by the wafer with a thickness of 100 µm. Fortunately, over 23% of the conversion efficiency of the SHJ solar cell with a wafer thickness of 100 µm was obtained based on the systematic optimization of cell fabrication process in the pilot production line. Evidently, the large availability of both n-type ingot and thinner wafer strongly supported the lower cost fabrication of high efficiency SHJ solar cell.

关键词： n-type Cz-Si     thinner wafer     surface texture     high efficiency     SHJ solar cell    

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Porous silica synthesis out of coal fly ash with no residue generation and complete silicon separation

《环境科学与工程前沿（英文）》 2023年 第17卷 第9期 doi: 10.1007/s11783-023-1712-2

摘要：

● Both amorphous and crystalline silicon are completely separated from coal fly ash.

关键词： Coal fly ash     Alkali fusion     Micro-/meso-porous Si     Zeolite MCM-48     Crystalline transformation    

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An industrial solution to light-induced degradation of crystalline silicon solar cells

Meng XIE,Changrui REN,Liming FU,Xiaodong QIU,Xuegong YU,Deren YANG

《能源前沿（英文）》 2017年 第11卷 第1期   页码 67-71 doi: 10.1007/s11708-016-0430-x

摘要： Boron-oxygen defects can cause serious light-induced degradation (LID) of commercial solar cells based on the boron-doped crystalline silicon (c-Si), which are formed under the injection of excess carriers induced either by illumination or applying forward bias. In this contribution, we have demonstrated that the passivation process of boron-oxygen defects can be induced by applying forward bias for a large quantity of solar cells, which is much more economic than light illumination. We have used this strategy to trigger the passivation process of batches of aluminum back surface field (Al-BSF) solar cells and passivated emitter and rear contact (PERC) solar cells. Both kinds of the treated solar cells show high stability in efficiency and suffer from very little LID under further illumination at room temperature. This technology is of significance for the suppression of LID of c-Si solar cells for the industrial manufacture.

关键词： Boron-oxygen defects     c-Si solar cells     light-induced degradation     passivation     forward bias    

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SiO2 passivation layer grown by liquid phase deposition for silicon solar cell application

Yanlin CHEN,Sihua ZHONG,Miao TAN,Wenzhong SHEN

《能源前沿（英文）》 2017年 第11卷 第1期   页码 52-59 doi: 10.1007/s11708-016-0429-3

摘要： Surface passivation is one of the primary requirements for high efficient silicon solar cells. Though the current existed passivation techniques are effective, expensive equipments are required. In this paper, a comprehensive understanding of the SiO passivation layer grown by liquid phase deposition (LPD) was presented, which was cost-effective and very simple. It was found that the post-annealing process could significantly enhance the passivation effect of the LPD SiO film. Besides, it was revealed that both chemical passivation and field-effect passivation mechanisms played important roles in outstanding passivation effect of the LPD SiO film through analyzing the minority carrier lifetime and the surface recombination velocity of n-type and p-type silicon wafers. Although the deposition parameters had little influence on the passivation effect, they affected the deposition rate. Therefore, appropriate deposition parameters should be carefully chosen based on the compromise of the deposition rate and fabrication cost. By utilizing the LPD SiO film as surface passivation layer, a 19.5%-efficient silicon solar cell on a large-scale wafer (156 mm × 156 mm) was fabricated.

关键词： Si solar cell     passivation     SiO2     liquid phase deposition     carrier lifetime    

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POCl3 diffusion for industrial Si solar cell emitter formation

Hongzhao LI,Kyung KIM,Brett HALLAM,Bram HOEX,Stuart WENHAM,Malcolm ABBOTT

《能源前沿（英文）》 2017年 第11卷 第1期   页码 42-51 doi: 10.1007/s11708-016-0433-7

摘要： POCl diffusion is currently the standard method for industrial n-type emitter fabrication. In this study, we present the impact of the following processing parameters on emitter formation and electrical performance: deposition gas flow ratio, drive-in temperature and duration, drive-in O flow rate, and thermal oxidation temperature. By showing their influence on the emitter doping profile and recombination activity, we provide an overall strategy for improving industrial POCl tube diffused emitters.

关键词： POCl3 diffusion     emitter recombination     oxidation     silicon    

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利用三元合金保护和催化的硅光阳极与廉价硅太阳能电池相结合实现12.0%的太阳能制氢效率 Article

何凌云, 洪欣, 王亦清, 邢众航, 耿嘉峰, 郭鹏慧, 苏进展, 沈少华

《工程（英文）》 2023年 第25卷 第6期   页码 128-137 doi: 10.1016/j.eng.2022.03.023

摘要：

n型硅（n-Si）表面在水溶液中容易被氧化和钝化，导致其在光电化学（PEC）分解水的析氧反应（OER）动力学缓慢。本工作通过欠电位沉积成功地在p+n-Si基底上电沉积了三金属Ni0.9Fe0.05Co0.05保护层。制备的Ni0.9Fe0.05Co0.05/p+n-Si光阳极具有优异的稳定性和PEC水氧化活性，具有相对低的OER起始电位（相对于可逆氢电极电势（RHE）仅为0.938 V），并且在1.23 V vs.RHE电位时具有较高的光电流密度（33.1 mA∙cm-2），显著优于Ni/p+n-Si光阳极。工作证明了Fe在Ni层的掺杂会在Ni0.9Fe0.05Co0.05/p+n-Si界面处产生较大的能带弯曲，促进界面电荷分离。

关键词： n-Si     光阳极     水分解     光伏/光电化学器件    

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III-V/Si异质光子集成：组件及其特性 Special Feature on Optoelectronic Devices and Inte

Shang-jian ZHANG, Yong LIU, Rong-guo LU, Bao SUN, Lian-shan YAN

《信息与电子工程前沿（英文）》 2019年 第20卷 第4期   页码 472-480 doi: 10.1631/FITEE.1800482

摘要： III-V/Si异质光子集成被视为实现能源效率和成本效率的光互连关键技术之一，在未来高性能计算机和数据中心有极大潜力。本文综述了包括收发器件和组件的III-V/Si异质光子集成的最新研究进展，并报告了在光子集成回路，特别是异质集成平台上实现光子集成回路的晶圆级测试分析进展。

关键词： 异质光子集成；光互连；晶圆级测试分析    

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Plasma enhanced chemical vapor deposition of excellent a-Si:H passivation layers for a-Si:H/c-Si heterojunction

Lei ZHAO,Wenbin ZHANG,Jingwei CHEN,Hongwei DIAO,Qi WANG,Wenjing WANG

《能源前沿（英文）》 2017年 第11卷 第1期   页码 85-91 doi: 10.1007/s11708-016-0437-3

摘要： The intrinsic a-Si:H passivation layer inserted between the doped a-Si:H layer and the c-Si substrate is very crucial for improving the performance of the a-Si:H/c-Si heterojunction (SHJ) solar cell. The passivation performance of the a-Si:H layer is strongly dependent on its microstructure. Usually, the compact a-Si:H deposited near the transition from the amorphous phase to the nanocrystalline phase by plasma enhanced chemical vapor deposition (PECVD) can provide excellent passivation. However, at the low deposition pressure and low deposition power, such an a-Si:H layer can be only prepared in a narrow region. The deposition condition must be controlled very carefully. In this paper, intrinsic a-Si:H layers were prepared on n-type Cz c-Si substrates by 27.12 MHz PECVD at a high deposition pressure and high deposition power. The corresponding passivation performance on c-Si was investigated by minority carrier lifetime measurement. It was found that an excellent a-Si:H passivation layer could be obtained in a very wide deposition pressure and power region. Such wide process window would be very beneficial for improving the uniformity and the yield for the solar cell fabrication. The a-Si:H layer microstructure was further investigated by Raman and Fourier transform infrared (FTIR) spectroscopy characterization. The correlation between the microstructure and the passivation performance was revealed. According to the above findings, the a-Si:H passivation performance was optimized more elaborately. Finally, a large-area SHJ solar cell with an efficiency of 22.25% was fabricated on the commercial 156 mm pseudo-square n-type Cz c-Si substrate with the open-circuit voltage ( ) of up to 0.732 V.

关键词： PECVD     high pressure and high power     a-Si:H microstructure     passivation     heterojunction solar cell    

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Computer modeling of crystal growth of silicon for solar cells

Lijun LIU, Xin LIU, Zaoyang LI, Koichi KAKIMOTO

《能源前沿（英文）》 2011年 第5卷 第3期   页码 305-312 doi: 10.1007/s11708-011-0155-9

摘要： A computer simulator with a global model of heat transfer during crystal growth of Si for solar cells is developed. The convective, conductive, and radiative heat transfers in the furnace are solved together in a coupled manner using the finite volume method. A three-dimensional (3D) global heat transfer model with 3D features is especially made suitable for any crystal growth, while the requirement for computer resources is kept permissible for engineering applications. A structured/unstructured combined mesh scheme is proposed to improve the efficiency and accuracy of the simulation. A dynamic model for the melt-crystal (mc) interface is developed to predict the phase interface behavior in a crystal growth process. Dynamic models for impurities and precipitates are also incorporated into the simulator. Applications of the computer simulator to Czochralski (CZ) growth processes and directional solidification processes of Si crystals for solar cells are introduced. Some typical results, including the turbulent melt flow in a large-scale crucible of a CZ-Si process, the dynamic behaviors of the mc interface, and the transport and distributions of impurities and precipitates, such as oxygen, carbon, and SiC particles, are presented and discussed. The findings show the importance of computer modeling as an effective tool in the analysis and improvement of crystal growth processes and furnace designs for solar Si material.

关键词： computer modeling     silicon     crystal growth     solar cells    

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Atomistic understanding of interfacial processing mechanism of silicon in water environment: A ReaxFF

《机械工程前沿（英文）》 2021年 第16卷 第3期   页码 570-579 doi: 10.1007/s11465-021-0642-6

摘要： The interfacial wear between silicon and amorphous silica in water environment is critical in numerous applications. However, the understanding regarding the micro dynamic process is still unclear due to the limitations of apparatus. Herein, reactive force field simulations are utilized to study the interfacial process between silicon and amorphous silica in water environment, exploring the removal and damage mechanism caused by pressure, velocity, and humidity. Moreover, the reasons for high removal rate under high pressure and high velocity are elucidated from an atomic perspective. Simulation results show that the substrate is highly passivated under high humidity, and the passivation layer could alleviate the contact between the abrasive and the substrate, thus reducing the damage and wear. In addition to more Si-O-Si bridge bonds formed between the abrasive and the substrate, new removal pathways such as multibridge bonds and chain removal appear under high pressure, which cause higher removal rate and severer damage. At a higher velocity, the abrasive can induce extended tribochemical reactions and form more interfacial Si-O-Si bridge bonds, hence increasing removal rate. These results reveal the internal cause of the discrepancy in damage and removal rate under different conditions from an atomic level.

关键词： silicon     ReaxFF     molecular dynamics     friction     damage    

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Effect of extrusion temperature on the physical properties of high-silicon aluminum alloy

YANG Fuliang, GAN Weiping, CHEN Zhaoke

《机械工程前沿（英文）》 2007年 第2卷 第1期   页码 120-124 doi: 10.1007/s11465-007-0021-y

摘要： Light-weight high-silicon aluminum alloys are used for electronic packaging in the aviation and space-flight industry. Al-30Si and Al-40Si are fabricated with air-atomization and vacuum-canning hot-extrusion process. The density, thermal conductivity, hermeticity and thermal expansion coefficients of the material are measured, and the relationship between extrusion temperature and properties is obtained. Experimental results show that the density of high-silicon aluminum alloys prepared with this method is as high as 99.64% of the theory density, and increases with elevating extrusion temperature. At the same time, thermal conductivity varies between 104-140 W/(m " K); with the extrusion temperature, thermal expansion coefficient also increases but within 13?10 (at 100?C) and hermeticity of the material is high to 10 order of magnitude.

关键词： coefficient     hermeticity     temperature     relationship     air-atomization    

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硅及硅基半导体材料中杂质缺陷和表面的研究

屠海令

《中国工程科学》 2000年 第2卷 第1期   页码 7-17

摘要：

随着超大规模集成电路设计线宽向深亚微米级（＜0.5μm）和亚四分之一微米级（＜0.25μm）发展，对半导体硅片及其它硅基材料的质量要求越来越高，研究上述材料中各种杂质的行为，控制缺陷类型及数量，提高晶体完整性，降低表面污染和采用缺陷工程的方法改善材料质量显得尤为重要。文章阐述了深亚微米级和亚四分之一微米级集成电路用大直径硅材料中铁、铜金属和氧、氢、氮非金属杂质元素的行为，点缺陷及其衍生缺陷的本质与控制方法，硅片表面形貌、表面污染与检测方法的研究热点。同时还介绍了外延硅、锗硅及绝缘体上硅（SOI）等硅基材料的特性、制备及工艺技术发展趋势，展望了跨世纪期间硅及硅基材料产业发展的技术经济前景。

关键词： 硅片     硅外延片     锗硅     绝缘体上硅     杂质行为     缺陷控制     表面质量    

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标题 作者 时间 类型 操作

Effects of nano-silicon and common silicon on lead uptake and translocation in two rice cultivars

Jianguo LIU,Hui CAI,Congcong MEI,Mingxin WANG

期刊论文

Ultrathin microcrystalline hydrogenated Si/Ge alloyed tandem solar cells towards full solar spectrum

Yu Cao, Xinyun Zhu, Xingyu Tong, Jing Zhou, Jian Ni, Jianjun Zhang, Jinbo Pang

期刊论文

Enhancing the photoelectrochemical performance of p-silicon through TiO coating decorated with mesoporous

期刊论文

High-quality industrial n-type silicon wafers with an efficiency of over 23% for Si heterojunction solar

Fanying MENG,Jinning LIU,Leilei SHEN,Jianhua SHI,Anjun HAN,Liping ZHANG,Yucheng LIU,Jian YU,Junkai ZHANG,Rui ZHOU,Zhengxin LIU

期刊论文

Porous silica synthesis out of coal fly ash with no residue generation and complete silicon separation

期刊论文

An industrial solution to light-induced degradation of crystalline silicon solar cells

Meng XIE,Changrui REN,Liming FU,Xiaodong QIU,Xuegong YU,Deren YANG

期刊论文

SiO2 passivation layer grown by liquid phase deposition for silicon solar cell application

Yanlin CHEN,Sihua ZHONG,Miao TAN,Wenzhong SHEN

期刊论文

POCl3 diffusion for industrial Si solar cell emitter formation

Hongzhao LI,Kyung KIM,Brett HALLAM,Bram HOEX,Stuart WENHAM,Malcolm ABBOTT

期刊论文

利用三元合金保护和催化的硅光阳极与廉价硅太阳能电池相结合实现12.0%的太阳能制氢效率

何凌云, 洪欣, 王亦清, 邢众航, 耿嘉峰, 郭鹏慧, 苏进展, 沈少华

期刊论文

III-V/Si异质光子集成：组件及其特性

Shang-jian ZHANG, Yong LIU, Rong-guo LU, Bao SUN, Lian-shan YAN

期刊论文

Plasma enhanced chemical vapor deposition of excellent a-Si:H passivation layers for a-Si:H/c-Si heterojunction

Lei ZHAO,Wenbin ZHANG,Jingwei CHEN,Hongwei DIAO,Qi WANG,Wenjing WANG

期刊论文

Computer modeling of crystal growth of silicon for solar cells

Lijun LIU, Xin LIU, Zaoyang LI, Koichi KAKIMOTO

期刊论文

Atomistic understanding of interfacial processing mechanism of silicon in water environment: A ReaxFF

期刊论文

Effect of extrusion temperature on the physical properties of high-silicon aluminum alloy

YANG Fuliang, GAN Weiping, CHEN Zhaoke

期刊论文

硅及硅基半导体材料中杂质缺陷和表面的研究

屠海令

期刊论文