Boosting Cu(In,Ga)Se2 Thin Film Growth in Low-Temperature Rapid-Deposition Processes: An Improved Design for the Single-Heating Knudsen Cell

Engineering ›› 2021, Vol. 7 ›› Issue (4) : 534 -541. DOI: 10.1016/j.eng.2020.01.016

Research

Article

Yunxiang Zhang ^a^,^b
, Shuping Lin ^a^,^b
, Shiqing Cheng ^a^,^b
, Zhichao He ^a^,^b
, Zhaojing Hu ^a^,^b
, Zhiqiang Zhou ^a^,^b
, Wei Liu * ^a^,^b
, Yun Sun ^a^,^b

Author information +

History +

Received	Accepted	Published
2019-07-08		2021-01-24
Issue Date	Revised Date
2024-06-14

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Abstract

The Knudsen effusion cell is often used to grow high-quality Cu(In,Ga)Se₂ (CIGS) thin film in coevaporation processes. However, the traditional single-heating Knudsen effusion cell cannot deliver complete metal selenides during the whole deposition process, particularly for a low-temperature deposition process, which is probably due to the condensation and droplet ejection at the nozzle of the crucible. In this study, thermodynamics analysis is conducted to decipher the reason for this phenomenon. Furthermore, a new single-heating Knudsen effusion is proposed to solve this difficult problem, which leads to an improvement in the quality of CIGS film and a relative increase in conversion efficiency of 29% at a growth rate of about 230 nm·min⁻¹ , compared with the traditional efficiency in a lowtemperature rapid-deposition process.

Keywords

Cu(In / Ga)Se₂ / Knudsen effusion cell / Condensation / Droplet ejection / Low temperature

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Yunxiang Zhang, Shuping Lin, Shiqing Cheng, Zhichao He, Zhaojing Hu, Zhiqiang Zhou, Wei Liu *, Yun Sun. Boosting Cu(In,Ga)Se2 Thin Film Growth in Low-Temperature Rapid-Deposition Processes: An Improved Design for the Single-Heating Knudsen Cell. Engineering, 2021, 7(4): 534-541 DOI:10.1016/j.eng.2020.01.016