Nanocutting of Ultrathin Vertically Aligned InSe Ribbons for Strain Engineering

Zihan Li; Yifei Xu; Donglei Yan; Yongda Yan; Oleg Zakharov; Chen Li; Hailong Cui; Yanquan Geng

doi:10.1016/j.eng.2025.05.017

Engineering ›› DOI: 10.1016/j.eng.2025.05.017

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Nanocutting of Ultrathin Vertically Aligned InSe Ribbons for Strain Engineering

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Abstract

Inorganic semiconductors play a pivotal role in various technological applications; however, their inherent brittleness limits their utilization in flexible electronics. Thinning materials such as glass fibers and silicon enhances flexibility while preserving mechanical properties. The focus of this research lies in strain engineering within indium selenide (InSe), a representative type of inorganic semiconductor renowned for its exceptional electron mobility and adjustable bandgap. By means of nanoskiving, ultrathin vertically aligned InSe ribbons were fabricated and subsequently transferred onto flexible polyethylene terephthalate (PET) substrates. The photoluminescence (PL) spectra revealed the tunability of the bandgap induced by strain, and the molecular dynamics (MD) simulations emphasized the influence of thickness on the mechanical properties. The vertically aligned InSe ribbons demonstrated an enhanced photoresponse under tensile strain in photodetectors, thereby demonstrating their potential for use in flexible optoelectronic devices. The nanocutting method results in novel mechanical and electronic properties, offering an alternative means to adjust the bandgap and facilitating the efficient fabrication of flexible optoelectronic devices with potential applications.

Keywords

InSe / Strain engineering / Nanoskiving / Photodetection

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Zihan Li, Yifei Xu, Donglei Yan, Yongda Yan, Oleg Zakharov, Chen Li, Hailong Cui, Yanquan Geng. Nanocutting of Ultrathin Vertically Aligned InSe Ribbons for Strain Engineering. Engineering DOI:10.1016/j.eng.2025.05.017

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