Material Removal Mechanism for Photoelectrochemical Mechanical Polishing of GaN Wafers with Different Oxidation Degrees

Yuewen Sun; Renke Kang; Han Huang; Yang Zhao; Shang Gao; Zhigang Dong

doi:10.1016/j.eng.2025.05.018

Engineering ›› DOI: 10.1016/j.eng.2025.05.018

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Material Removal Mechanism for Photoelectrochemical Mechanical Polishing of GaN Wafers with Different Oxidation Degrees

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Abstract

Gallium nitride (GaN) single crystals exhibit high hardness and chemical stability, making them difficult to process using traditional chemical mechanical polishing because of their low material removal efficiency. Photoelectrochemical mechanical polishing (PECMP) is a highly efficient method for obtaining ultrasmooth surfaces where the oxidation effect of the photoelectric field is crucial for enhancing polishing efficiency. However, the influence of varying oxidation degrees on material removal remains unclear. This study used molecular dynamics simulations, complemented by PECMP experiments, to systematically investigate the impact of oxidation degree on material removal during the PECMP of GaN wafers. The analysis focused on the variations in force, stress, temperature, and material damage during polishing. The results revealed that increasing the degree of oxidation leads to two primary modes of atom removal: direct removal due to weakened interatomic bonding and phase transitions triggered by high temperature, localized high stress during scratching, and introduction of oxygen atoms. These findings provide a theoretical framework for understanding material removal in PECMP and offer guidance for optimizing process parameters.

Keywords

Gallium nitride / Molecular dynamics / Photoelectrochemical mechanical polishing / Oxidation degree / Material removal

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Yuewen Sun, Renke Kang, Han Huang, Yang Zhao, Shang Gao, Zhigang Dong. Material Removal Mechanism for Photoelectrochemical Mechanical Polishing of GaN Wafers with Different Oxidation Degrees. Engineering DOI:10.1016/j.eng.2025.05.018

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