Electric Field-Assisted Atomic-Scale Direct Writing of Monocrystalline Silicon

Ning Huang; Ping Zhou; Zhichao Geng; Yang He; Fengzhou Fang

doi:10.1016/j.eng.2025.11.003

Engineering ›› :202511003 DOI: 10.1016/j.eng.2025.11.003

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Electric Field-Assisted Atomic-Scale Direct Writing of Monocrystalline Silicon

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Abstract

Future quantum chips, sensors, and integrated circuits will require atomic-scale construction to achieve higher performance and device density. However, current manufacturing technologies cannot fully meet this requirement. This study introduces a novel atomic-scale direct-writing (ADW) technique based on atomic force microscopy (AFM) for monocrystalline silicon, a key substrate material. In ADW, applying a negative bias to the workpiece generates an electric field between the AFM probe and the substrate, initiating an electrolytic reaction within the meniscus formed by capillary and electric forces. This process drives hydrogen ions to break Si-Si bonds—a previously unreported mechanism that enables atomic-scale silicon removal. By presenting both the fabrication method and its underlying mechanism, this work provides new insights into atomic-scale manufacturing, with potential applications in semiconductor and quantum-device fabrication.

Keywords

Atomic-scale direct writing / Atomic force microscopy / Electric field / Monocrystalline silicon / Hydrogen ions

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Ning Huang, Ping Zhou, Zhichao Geng, Yang He, Fengzhou Fang. Electric Field-Assisted Atomic-Scale Direct Writing of Monocrystalline Silicon. Engineering 202511003 DOI:10.1016/j.eng.2025.11.003

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