Dual-Material Electron Beam Selective Melting: Hardware Development and Validation Studies

Chao Guo, Wenjun Ge, Feng Lin

Engineering ›› 2015, Vol. 1 ›› Issue (1) : 124-130.

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Engineering ›› 2015, Vol. 1 ›› Issue (1) : 124-130. DOI: 10.15302/J-ENG-2015013
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Dual-Material Electron Beam Selective Melting: Hardware Development and Validation Studies

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Abstract

Electron beam selective melting (EBSM) is an additive manufacturing technique that directly fabricates three-dimensional parts in a layerwise fashion by using an electron beam to scan and melt metal powder. In recent years, EBSM has been successfully used in the additive manufacturing of a variety of materials. Previous research focused on the EBSM process of a single material. In this study, a novel EBSM process capable of building a gradient structure with dual metal materials was developed, and a powder-supplying method based on vibration was put forward. Two different powders can be supplied individually and then mixed. Two materials were used in this study: Ti6Al4V powder and Ti47Al2Cr2Nb powder. Ti6Al4V has excellent strength and plasticity at room temperature, while Ti47Al2Cr2Nb has excellent performance at high temperature, but is very brittle. A Ti6Al4V/Ti47Al2Cr2Nb gradient material was successfully fabricated by the developed system. The microstructures and chemical compositions were characterized by optical microscopy, scanning microscopy, and electron microprobe analysis. Results showed that the interface thickness was about 300 μm. The interface was free of cracks, and the chemical compositions exhibited a staircase-like change within the interface.

Keywords

additive manufacturing / electron beam / selective melting / gradient materials / titanium alloy / TiAl alloy

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Chao Guo, Wenjun Ge, Feng Lin. Dual-Material Electron Beam Selective Melting: Hardware Development and Validation Studies. Engineering, 2015, 1(1): 124‒130 https://doi.org/10.15302/J-ENG-2015013

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Acknowledgements

The authors would like to acknowledge the funding of 2013 Beijing Science and Technology Development Project (D13110400300000 and D131100003013002).
Compliance with ethics guidelines
Chao Guo, Wenjun Ge, and Feng Lin declare that they have no conflict of interest or financial conflicts to disclose.
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