PDF(3079 KB)
Development of 8-inch Key Processes for Insulated-Gate Bipolar Transistor
Guoyou Liu, Rongjun Ding, Haihui Luo
Engineering ›› 2015, Vol. 1 ›› Issue (3) : 361-366.
PDF(3079 KB)
PDF(3079 KB)
Development of 8-inch Key Processes for Insulated-Gate Bipolar Transistor
Based on the construction of the 8-inch fabrication line, advanced process technology of 8-inch wafer, as well as the fourth-generation high-voltage double-diffused metal-oxide semiconductor (DMOS+) insulated-gate bipolar transistor (IGBT) technology and the fifth-generation trench gate IGBT technology, have been developed, realizing a great-leap forward technological development for the manufacturing of high-voltage IGBT from 6-inch to 8-inch. The 1600 A/1.7 kV and 1500 A/3.3 kV IGBT modules have been successfully fabricated, qualified, and applied in rail transportation traction system.
insulated-gate bipolar transistor (IGBT) / high power density / trench gate / 8-inch / rail transportation
| [1] |
S. Tamai. High power converter technologies for saving and sustaining energy. In: Proceedings of the 26th International Symposium on Power Semiconductor Devices & IC’s. New York: IEEE, 2014: 12–18
|
| [2] |
P. L. Hower, S. Pendharkar, T. Efland. Current status and future trends in silicon power devices. In: Proceedings of 2010 International Electron Devices Meeting. New York: IEEE, 2010: 13.1.1–13.1.4
|
| [3] |
R. Ding, G. Liu. Technical features and development trend of high-voltage IGBT for rail transit traction application. Electric Drive for Locomotives, 2014(1): 1–6(in Chinese)
|
| [4] |
L. F. Casey, L. E. Zubieta, J. T. Mossoba, B. S. Borowy, B. Semenov. Power devices for grid connections. In: Proceedings of the 24th International Symposium on Power Semiconductor Devices & IC’s. New York: IEEE, 2012: 1–7
|
| [5] |
G. Liu. High-power IGBT module technology using in smart grid. Power Electronics, 2009(6): 14–17<?Pub Caret?>(in Chinese)
|
| [6] |
T. Uzuka. Trends in high-speed railways and the implications on power electronics and power devices. In: Proceedings of the 23rd International Symposium on Power Semiconductor Devices & IC’s. New York: IEEE, 2011: 6–9
|
| [7] |
K. Nakano, M. Hosoda. Emerging electric drive technologies for 2010. In: Proceedings of the 22nd International Symposium on Power Semiconductor Devices & IC’s. New York: IEEE, 2010: 13–18
|
| [8] |
L. Lorenz. Key power semiconductor devices and development trends. In: Proceedings of International Conference on Electrical Machines and Systems, 2008: 1137–1142
|
| [9] |
J. Vobecký. Design and technology of high-power silicon devices. In: Proceedings of the 18th International Conference on Mixed Design of Integrated Circuits and Systems. New York: IEEE, 2011: 17–22
|
| [10] |
S. Umekawa, M. Yamaguchi, H. Ninomiya, S. Wakiyama. New discrete IGBT development for consumer use—Application-specific advanced discrete IGBTs with optimized chip design. In: Proceedings of 2010 International Power Electronics Conference. New York: IEEE, 2010: 790–795
|
| [11] |
M. Pfaffenlehner, J. Biermann, C. Schaeffer, H. Schulze. New 3300V chip generation with a trench IGBT and an optimized field stop concept with a smooth switching behavior. In: Proceedings of the 16th International Symposium on Power Semiconductor Devices & IC’s. New York: IEEE, 2004: 107–110
|
| [12] |
M. Otsuki, Y. Onozawa, S. Yoshiwatari, Y. Seki. 1200V FS-IGBT module with enhanced dynamic clamping capability. In: Proceedings of the 16th International Symposium on Power Semiconductor Devices & IC’s. New York: IEEE, 2004: 339–342
|
| [13] |
M. Mori,
|
| [14] |
J. Vobecký, M. Rahimo, A. Kopta, S. Linder. Exploring the silicon design limits of thin wafer IGBT technology: The controlled punch through (CPT) IGBT. In: Proceedings of the 20th International Symposium on Power Semiconductor Devices & IC’s. New York: IEEE, 2008: 76–79
|
| [15] |
M. Sumitomo, J. Asai, H. Sakane, K. Arakawa, Y. Higuchi, M. Matsui. Low loss IGBT with partially narrow mesa structure (PNM-IGBT). In: Proceedings of the 24th International Symposium on Power Semiconductor Devices & IC’s. New York: IEEE, 2012: 17–20
|
| [16] |
Y. Toyota,
|
| [17] |
H.J. Schulze,
|
| [18] |
H. Ruthing, F. Hille, F. J. Niedernostheide, H. J. Schulze, B. Brunner. 600 V reverse conducting (RC-)IGBT for drives applications in ultra-thin wafer technology. In: Proceedings of the 19th International Symposium on Power Semiconductor Devices & IC’s. New York: IEEE, 2007: 89–92
|
| [19] |
M. Tanaka. Novel structure oriented compact model and scaling rule for next generation power semiconductor devices (Doctoral dissertation). Japan: Kyushu Institute of Technology, 2012
|
| [20] |
J. Hu, W. Liu. J. Yang. Application of power electronic devices in rail transportation traction system. In: Proceedings of the 27th International Symposium on Power Semiconductor Devices & IC’s. New York: IEEE, 2015: 7–12
|
| [21] |
P. Bhatnagar, P. Waind, L. Coulbeck, I. Deviny, J. Thomson. Improvements in SOA ruggedness of 6.5 kV IGBTs. In: Proceedings of the 2011-14th European Conference on Power Electronics and Applications. New York: IEEE, 2011: 1–8
|
| [22] |
S. Watanabe,
|
/
| 〈 |
|
〉 |
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