集成电路用高纯金属溅射靶材发展研究

何金江 , 吕保国 , 贾倩 , 丁照崇 , 刘书芹 , 罗俊锋 , 王兴权

中国工程科学 ›› 2023, Vol. 25 ›› Issue (1) : 79 -87.

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中国工程科学 ›› 2023, Vol. 25 ›› Issue (1) : 79 -87. DOI: 10.15302/J-SSCAE-2023.01.003
我国先进有色金属材料发展战略研究

集成电路用高纯金属溅射靶材发展研究

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Development of High-purity Metal Sputtering Targets for Integrated Circuits

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摘要

高纯金属溅射靶材是集成电路用关键基础材料,对实现集成电路用靶材的全面自主可控,推动集成电路产业高质量发展具有基础性价值。本文分析了集成电路用高纯金属溅射靶材的应用需求,梳理了相应高纯金属溅射靶材的研制现状,涵盖高纯铝及铝合金、高纯铜及铜合金、高纯钛、高纯钽、高纯钴和镍铂、高纯钨及钨合金等细分类别。在凝练我国高端靶材制备关键技术及工程化方面存在问题的基础上,着眼领域2030年发展目标,提出了集成电路用高纯金属溅射靶材产业的重点发展方向:提升材料制备技术水平,攻克高性能靶材制备关键技术,把握前沿需求开发高端新材料,提升材料分析检测和应用评价能力。研究建议,开展“产学研用”体系建设,解决关键设备国产化问题,加强人才队伍建设力度,掌握自主知识产权体系,拓展国际合作交流,以此提升高纯金属溅射靶材的发展质量和水平。

Abstract

High-purity metal sputtering target is one of the key basic materials for integrated circuits. Self-dependence of the sputtering targets is vital for the high-quality development of the integrated circuit industry in China. This study analyzes the application demand for and development status of high-purity metal sputtering targets for integrated circuits, involving high-purity aluminum and aluminum alloys, high-purity copper and copper alloys, high-purity titanium, high-purity tantalum, high-purity cobalt, high-purity nickel-platinum, and high-purity tungsten and tungsten alloys. Moreover, it summarizes the challenges regarding the key manufacturing technologies and engineering application of high-performance sputtering targets in China and proposes several major development directions based on the development goals of the field by 2030. Specifically, China needs to improve its material processing technologies, focus on the key technologies for high-performance target processing, develop high-end new materials according to frontier demands, and improve the capabilities of material analysis, testing, and application evaluation. Furthermore, the following suggestions are proposed: establishing an industry-education-research-application system, realizing the domestic manufacturing of key equipment, strengthening talent team construction, establishing an independent intellectual property system, and expanding international exchange and cooperation, thereby promoting the development quality and level of high-purity metal sputtering targets.

关键词

高纯金属 / 溅射靶材 / 集成电路 / 薄膜 / 金属化

Key words

high-purity metal / sputtering target / integrated circuit / thin film / metallization

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何金江, 吕保国, 贾倩, 丁照崇, 刘书芹, 罗俊锋, 王兴权 集成电路用高纯金属溅射靶材发展研究[J]. 中国工程科学, 2023, 25(1): 79-87 DOI:10.15302/J-SSCAE-2023.01.003

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中国工程院咨询项目“我国先进有色金属材料发展战略研究”(2022-XZ-20)

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