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2022, Volume 23, Issue 2

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Frontiers of Information Technology & Electronic Engineering >> 2022, Volume 23, Issue 2 doi: 10.1631/FITEE.2000513

A 17–26.5 GHz 42.5 dBm broadband and highly efficient gallium nitride power amplifier design

Affiliation(s): Institute of RF-&OE-ICs, Southeast University, Nanjing210096, China; Science and Technology on Monolithic Integrated and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing210016, China; Engineering Research Center of RF-ICs and RF-Systems, Ministry of Education, Nanjing210096, China; less

Received: 2020-09-29 Accepted: 2022-02-28 Available online: 2022-02-28
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Abstract

A wideband power amplifier is one of the key components in mobile communication systems and radar systems because it is a key component of radio frequency (RF) front-end systems, and its performance occupies a dominant position in the entire system function. GaN as the representative of the third generation of wide band gap semiconductors has the advantages of wide band gap, high electron mobility, and high breakdown field strength (Mishra et al., 2008; Millán et al., 2014). The power density of the device far exceeds that of Si and GaAs. Because of its high frequency, high power, high efficiency, high temperature resistance, high radiation resistance, and other excellent characteristics, GaN MMICs have broad application prospects in the microwave and millimeter wave bands.

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