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Effects of nano-silicon and common silicon on lead uptake and translocation in two rice cultivars

Jianguo LIU,Hui CAI,Congcong MEI,Mingxin WANG

Frontiers of Environmental Science & Engineering 2015, Volume 9, Issue 5,   Pages 905-911 doi: 10.1007/s11783-015-0786-x

Abstract: The current study investigated the effects of nano-silicon (Si) and common Si on lead (Pb) toxicity,

Keywords： silicon (Si)     lead (Pb)     rice (Oryza sativa L.)     toxicity     accumulation    

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Computer modeling of crystal growth of silicon for solar cells

Lijun LIU, Xin LIU, Zaoyang LI, Koichi KAKIMOTO

Frontiers in Energy 2011, Volume 5, Issue 3,   Pages 305-312 doi: 10.1007/s11708-011-0155-9

Abstract: A computer simulator with a global model of heat transfer during crystal growth of Si for solar cells is developed. The convective, conductive, and radiative heat transfers in the furnace are solved together in a coupled manner using the finite volume method. A three-dimensional (3D) global heat transfer model with 3D features is especially made suitable for any crystal growth, while the requirement for computer resources is kept permissible for engineering applications. A structured/unstructured combined mesh scheme is proposed to improve the efficiency and accuracy of the simulation. A dynamic model for the melt-crystal (mc) interface is developed to predict the phase interface behavior in a crystal growth process. Dynamic models for impurities and precipitates are also incorporated into the simulator. Applications of the computer simulator to Czochralski (CZ) growth processes and directional solidification processes of Si crystals for solar cells are introduced. Some typical results, including the turbulent melt flow in a large-scale crucible of a CZ-Si process, the dynamic behaviors of the mc interface, and the transport and distributions of impurities and precipitates, such as oxygen, carbon, and SiC particles, are presented and discussed. The findings show the importance of computer modeling as an effective tool in the analysis and improvement of crystal growth processes and furnace designs for solar Si material.

Keywords： computer modeling     silicon     crystal growth     solar cells    

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Atomistic understanding of interfacial processing mechanism of silicon in water environment: A ReaxFF

Frontiers of Mechanical Engineering 2021, Volume 16, Issue 3,   Pages 570-579 doi: 10.1007/s11465-021-0642-6

Abstract: The interfacial wear between silicon and amorphous silica in water environment is critical in numerousHerein, reactive force field simulations are utilized to study the interfacial process between silicon

Keywords： silicon     ReaxFF     molecular dynamics     friction     damage    

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Effect of extrusion temperature on the physical properties of high-silicon aluminum alloy

YANG Fuliang, GAN Weiping, CHEN Zhaoke

Frontiers of Mechanical Engineering 2007, Volume 2, Issue 1,   Pages 120-124 doi: 10.1007/s11465-007-0021-y

Abstract: Light-weight high-silicon aluminum alloys are used for electronic packaging in the aviation and space-flightExperimental results show that the density of high-silicon aluminum alloys prepared with this method

Keywords： coefficient     hermeticity     temperature     relationship     air-atomization    

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Behavior of Impurities, Defects and Surface Morphology for Silicon and Silicon Based Semiconducting Materials

Tu Hailing

Strategic Study of CAE 2000, Volume 2, Issue 1,   Pages 7-17

Abstract: Since silicon based materials as the alternative material systems have received strong growing interest, the manufacturing technologies and applications of SiGe, silicon-on-insulator (SOI) have been introducedFinally, the author outlooks the future scientific and engineering challenges and opportunities for siliconand silicon based materials envisioned for the sub quarter-micro and nanometer integrated circuits as

Keywords： silicon wafers     epitaxial silicon wafers     SiGe     silicon-on-insulator (SOI)     impurities behavior     defects control    

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Laser enhanced gettering of silicon substrates

Daniel CHEN,Matthew EDWARDS,Stuart WENHAM,Malcolm ABBOTT,Brett HALLAM

Frontiers in Energy 2017, Volume 11, Issue 1,   Pages 23-31 doi: 10.1007/s11708-016-0441-7

Abstract: One challenge to the use of lightly-doped, high efficiency emitters on multicrystalline silicon wafers, a novel laser based method for gettering is investigated for its impact on commercially available silicon

Keywords： gettering     multicystaline     silicon     impurities     laser doping    

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Special issue: Technologies for future high-efficiency industrial silicon wafer solar cells

Frontiers in Energy 2017, Volume 11, Issue 1,   Pages 1-3 doi: 10.1007/s11708-016-0436-4

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Erratum to: Enhancing the photoelectrochemical performance of p-silicon through TiO coating decorated

Frontiers in Energy 2022, Volume 16, Issue 5,   Pages 876-877 doi: 10.1007/s11708-022-0832-x

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Effects of taping on grinding quality of silicon wafers in backgrinding

Zhigang DONG, Qian ZHANG, Haijun LIU, Renke KANG, Shang GAO

Frontiers of Mechanical Engineering 2021, Volume 16, Issue 3,   Pages 559-569 doi: 10.1007/s11465-020-0624-0

Abstract: Taping is often used to protect patterned wafers and reduce fragmentation during backgrinding of siliconGrinding experiments using coarse and fine resin-bond diamond grinding wheels were performed on siliconHowever, the PV value, surface roughness, and subsurface damage of silicon wafers with taping deterioratedThe PV value of silicon wafers with taping decreased with increasing mesh size of the grinding wheelThe surface roughness and subsurface damage of silicon wafers with taping decreased with increasing mesh

Keywords： taping     silicon wafer     backgrinding     subsurface damage     surface roughness    

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Ultraviolet exposure enhanced silicon direct bonding

Guanglan LIAO, Xuekun ZHANG, Xiaohui LIN, Canghai MA, Lei NIE, Tielin SHI,

Frontiers of Mechanical Engineering 2010, Volume 5, Issue 1,   Pages 87-92 doi: 10.1007/s11465-009-0078-x

Abstract: technique following the traditional wet chemical activation processes, is applied to enhance hydrophilic siliconThe effects of UV exposure on silicon wafers’ nano-topography and bonding strength are studied.It is found that the surface roughness of silicon wafers initially decreases and then increases withIt follows from the results that the bonding strength of silicon wafer pairs with UV exposure decreases, appropriate UV exposure (about three minutes in this study) is effective and promising to enhance silicon

Keywords： ultraviolet (UV) exposure     silicon direct bonding     bonding strength     reliability    

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Enhancing the photoelectrochemical performance of p-silicon through TiO coating decorated with mesoporous

Frontiers in Energy 2021, Volume 15, Issue 3,   Pages 772-780 doi: 10.1007/s11708-021-0783-7

Abstract: highly-ordered mesoporous MoS2 was synthesized and decorated onto a TiO2 protected p-silicon

Keywords： photoelectrocatalysis     hydrogen evolution     Si photocathode     mesoporous MoS2    

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Mesoporous silicon sulfonic acid as a highly efficient and stable catalyst for the selective hydroamination

Jingbin Wen, Kuiyi You, Minjuan Chen, Jian Jian, Fangfang Zhao, Pingle Liu, Qiuhong Ai, He’an Luo

Frontiers of Chemical Science and Engineering 2021, Volume 15, Issue 3,   Pages 654-665 doi: 10.1007/s11705-020-1973-2

Abstract: In this work, a new mesoporous silicon sulfonic acid catalyst derived from silicic acid has been successfullyThe physicochemical properties of mesoporous silicon sulfonic acid catalysts have been systematicallyThe mesoporous silicon sulfonic acid exhibits excellent catalytic performance and stability in the vaporThe developed mesoporous silicon sulfonic acid catalyst shows advantages of low cost, superior acid siteMoreover, a possible catalytic hydroamination reaction mechanism over silicon sulfonic acid was suggested

Keywords： mesoporous silicon sulfonic acid     catalytic hydroamination     cyclohexene     dicyclohexylamine     vapor phase    

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Silicon carbide waste as a source of mixture materials for cement mortar

Zhengwu Jiang, Qiang Ren, Haoxin Li, Qing Chen

Frontiers of Environmental Science & Engineering 2017, Volume 11, Issue 5, doi: 10.1007/s11783-017-0974-y

Abstract: This paper presents an investigation of the feasibility of recycling silicon carbide waste (SCW) as a

Keywords： Silicon carbide waste     Cement mortar     Fluidity     Strength     Shrinkage    

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A non-lithographic plasma nanoassembly technology for polymeric nanodot and silicon nanopillar fabrication

Athanasios Smyrnakis, Angelos Zeniou, Kamil Awsiuk, Vassilios Constantoudis, Evangelos Gogolides

Frontiers of Chemical Science and Engineering 2019, Volume 13, Issue 3,   Pages 475-484 doi: 10.1007/s11705-019-1809-0

Abstract: assembly method to both create the nanodot pattern on an etched polymeric (PMMA) film and transfer it to a siliconsubstrate for the fabrication of silicon nanopillars or cone-like nanostructuring.Pattern transfer to the silicon substrate using the same plasma reactor was performed in two ways: (a) a mixed fluorine-fluorocarbon-oxygen nanoscale etch plasma process was employed to fabricate silicon

Keywords： plasma     nanoassembly     etching     nanodots     nanopillars     nanofabrication    

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Progress and Prospect of Semiconductor Silicon Wafers in China

Zhang Guohu, Xiao Qinghua, Ma Fei

Strategic Study of CAE 2023, Volume 25, Issue 1,   Pages 68-78 doi: 10.15302/J-SSCAE-2023.01.002

Abstract:

Silicon wafers are fundamental materials for semiconductors.China's semiconductor silicon wafers are highly dependent on foreign trade.Enhancing the independent guarantee capability of silicon wafers is significant for improving the overallThis study focuses on the market-dominant 8-inch and 12-inch silicon wafers, analyzes the developmentstatus of the global semiconductor silicon wafer technologies and industry, and prospects the development

Keywords： semiconductor silicon wafer     8 inches     12 inches     industry synergy     advanced processing    

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Title Author Date Type Operation

Effects of nano-silicon and common silicon on lead uptake and translocation in two rice cultivars

Jianguo LIU,Hui CAI,Congcong MEI,Mingxin WANG

Journal Article

Computer modeling of crystal growth of silicon for solar cells

Lijun LIU, Xin LIU, Zaoyang LI, Koichi KAKIMOTO

Journal Article

Atomistic understanding of interfacial processing mechanism of silicon in water environment: A ReaxFF

Journal Article

Effect of extrusion temperature on the physical properties of high-silicon aluminum alloy

YANG Fuliang, GAN Weiping, CHEN Zhaoke

Journal Article

Behavior of Impurities, Defects and Surface Morphology for Silicon and Silicon Based Semiconducting Materials

Tu Hailing

Journal Article

Laser enhanced gettering of silicon substrates

Daniel CHEN,Matthew EDWARDS,Stuart WENHAM,Malcolm ABBOTT,Brett HALLAM

Journal Article

Special issue: Technologies for future high-efficiency industrial silicon wafer solar cells

Journal Article

Erratum to: Enhancing the photoelectrochemical performance of p-silicon through TiO coating decorated

Journal Article

Effects of taping on grinding quality of silicon wafers in backgrinding

Zhigang DONG, Qian ZHANG, Haijun LIU, Renke KANG, Shang GAO

Journal Article

Ultraviolet exposure enhanced silicon direct bonding

Guanglan LIAO, Xuekun ZHANG, Xiaohui LIN, Canghai MA, Lei NIE, Tielin SHI,

Journal Article

Enhancing the photoelectrochemical performance of p-silicon through TiO coating decorated with mesoporous

Journal Article

Mesoporous silicon sulfonic acid as a highly efficient and stable catalyst for the selective hydroamination

Jingbin Wen, Kuiyi You, Minjuan Chen, Jian Jian, Fangfang Zhao, Pingle Liu, Qiuhong Ai, He’an Luo

Journal Article

Silicon carbide waste as a source of mixture materials for cement mortar

Zhengwu Jiang, Qiang Ren, Haoxin Li, Qing Chen

Journal Article

A non-lithographic plasma nanoassembly technology for polymeric nanodot and silicon nanopillar fabrication

Athanasios Smyrnakis, Angelos Zeniou, Kamil Awsiuk, Vassilios Constantoudis, Evangelos Gogolides

Journal Article

Progress and Prospect of Semiconductor Silicon Wafers in China

Zhang Guohu, Xiao Qinghua, Ma Fei

Journal Article