目前，以SiC、GaN为代表的第三代半导体材料快速发展，我国亟需抓住战略机遇期，实现先进半导体材料、辅助材料的自主可控，保障相关工业体系安全。本文在分析全球半导体材料及辅助材料研发与产业发展现状的基础上，寻找差距，结合我国现实情况，提出了构建半导体材料及辅助材料体系化发展、上下游协同发展和可持续发展的发展思路，制定了面向2025年和2035年的发展目标。为推动我国先进半导体材料及辅助材料产业发展，提出了建设集成电路关键材料及装备自主可控工程，SiC和GaN半导体材料、辅助材料、工艺及装备验证平台，先进半导体材料在第五代移动通信技术、能源互联网及新能源汽车领域的应用示范工程，并对如何开展三项工程进行了需求分析，设置了具体的工程目标和工程任务。最后，为推动半导体产业的创新发展，从坚持政策推动，企业和机构主导，整合国内优势资源；把握“超越摩尔”的历史机遇，布局下一代集成电路技术；构建创新链，进行创新生态建设等方面提出了对策建议。

The rapid development of the third-generation semiconductor materials represented by SiC and GaN offers China a strategic opportunity to realize the independent control over its advanced semiconductor materials and auxiliary materials sector and to ensure the security of relevant industrial systems. In this paper, we analyze the development status of semiconductor materials and auxiliary materials in China and abroad, propose the idea of systematic, upstream–downstream coordinated, and sustainable development, and set the development goals for these materials by 2025 and 2035. To promote the development of advanced semiconductor materials and auxiliary materials in China, we suggest the establishment of a project for realizing independent control over key material and equipment of integrated circuit; a platform that provides integrated tests for SiC and GaN semiconductor materials, auxiliary materials,processes, and equipment; and application demonstration projects for advanced semiconductor materials in the fifth-generation mobile communication, energy internet, and new energy vehicle fields. Demand analysis regarding these projects is conducted and specific project objectives and tasks are proposed correspondingly. To promote the innovative development of the semiconductor industry,China should adhere to government guidance to facilitate the integration of domestic advantageous resources, grasp the “More Than Moore” opportunity of to lay out the next-generation integrated circuit technologies, and construct an innovation chain to further improve the innovation ecology.