就建设1000t电子级多晶硅厂的技术进行了探讨。对三氣氢硅法、四氣化硅法、二氣二氢硅法和硅烷法生产的多晶硅质量、安全性、运输和存贮的可行性、有用沉积比、沉积速率、一次转换率、生长温度、电耗和价格进行了对比；对还原或热分解使用的反应器即钟罩式反应器、流床反应器和自由空间反应器也进行了比较。介绍了用三氣氢硅钟罩式反应器法生产多晶硅三代流程。第三代多晶硅流程适于1000t/a级的电子级多晶硅生产。

The technology of construction of an electronic grade polycrystalline silicon plant with annual production of 1 000 tons is explored. The product qualities, safety, transportation, storage, useful deposition ratios, deposition rates, one pass conversions, deposition temperatures, electrical energy consumption and manufacturing costs are summarized for silane, dichlorosilane, trichlorosilane and tetrachlorosilane methods. The bell jar, fluidized bed and free-space polysilicon reactors for polysilicon deposition are compared with each other. In addition, the flow charts of polysilicon production are described. The trichlorosilane method of third generation using bell jar reactors is suitable for a plant with an annual production of 1 000 tons of electronic grade polysilicon.