以分子束外延（MBE）GaAs基微结构材料为基础制作的HEMT，PHEMT等器件在信息产业中已广泛应用，在国外并已进入产业化。20世纪80年代中期以来，中科院半体所研制的MBE GaAs基材料，已被成功地用于制备出一系列新型半导体器件；其HEMT，PHEMT微结构材料的实用化性能指标已经基本达到国际一流产品的水平；并对MBE GaAs材料如何走向产业化进行了探讨。

Novel microelectronic devices, such as HEMT and PHEMT, etc. , which are based on molecular beam epitaxial (MBE) GaAs-based microstructures, have found widespread applications in modern day information technology. These devices have already been commercialized in some foreign countries. In China, continuous endeavor since mid-80, s in making GaAs-based microstructural materials by MBE has led to successful realizations of many such novel devices. Notably, the HEMT and PHEMT devices made from microstructural materials grown by MBE in Institute of Semiconductors, Chinese Academy of Sciences have demonstrated very good performances approaching the world-best. This paper aims at exploring the ways by which such research results can be transferred from laboratory to market.