提出了高压VDMOS的一种高精度静态物理模型(HASPM)。在该模型中，基于更为合理的假设而使得用解析方法求得了双扩散沟道区中的电场和电压；通过深入研究VDMOS 内部的物理特性，给出了一个关于漂移区电场的微分方程，并在整个漂移区都用解析方法求解了该微分方程，由此求得了漂移区的电压降。计算结果表明， 该模型在漏端电流接近饱和处的稳定性有较大提高，具有较高的计算精度，特别是在栅电压与漏电压都比较大的情况下，其计算精度有较大程度的提高。

A high accurate steady-state physical model for high-voltage VDMOS is proposed in the paper. In the model, a more proper assumption result in obtaining both the electric field and the voltage in the double diffused channel region by analytical method; and after studying physical characteristic of VDMOS in detail, a differential equation concerning the electric field of the drift region is obtained, moreover, the analytical solution of this differential equation is given for the whole drift region, then the voltage drop of the drift region is obtained. The result shows that the calculation stability in the region adjacent to saturation of the drain current are improved in the paper´s model, and furthermore, the calculation prec ision of the paper´s model is high. Especially in the condition of high gate vol tage and high drain voltage it is improved to a great extent.