The technology of construction of an electronic grade polycrystalline silicon plant with annual production of 1 000 tons is explored. The product qualities, safety, transportation, storage, useful deposition ratios, deposition rates, one pass conversions, deposition temperatures, electrical energy consumption and manufacturing costs are summarized for silane, dichlorosilane, trichlorosilane and tetrachlorosilane methods. The bell jar, fluidized bed and free-space polysilicon reactors for polysilicon deposition are compared with each other. In addition, the flow charts of polysilicon production are described. The trichlorosilane method of third generation using bell jar reactors is suitable for a plant with an annual production of 1 000 tons of electronic grade polysilicon.