摘要：
MgZnO (0 < ? 0.12) thin films with the wurtzite structure have been successfully grown on -AlO substrates by metal-organic chemical vapor deposition (MOCVD). X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), photoluminescence (PL) spectrometry, and transmission measurements are performed to study the characteristics of MgZnO thin films. Results show that with increasing Mg content, the diffraction peak of MgZnO thin films shifts towards a higher diffraction angle (the biggest shift is 0.22°), and the full width at half maximum (FWHM) of the diffraction peak is broadened. Meanwhile, a blue-shift occurs at the near-band-edge (NBE) emission peak and the largest blue-shift of the band gap of the MgZnO films is 113 meV with Mg content = 0.12. Therefore, the energy band gap of the MgZnO films is determined by Mg content in the thin films and the energy band gap increases with an increase of Mg content.
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