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Journal Article 6

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1512L insulator 1

CMOS silicon-on-insulator (SOI) 1

Linearity analysis 1

Milimeter wave (mm-Wave) 1

Power amplifier 1

Promoter measurement 1

RiboJ 1

SiGe 1

Synthetic biology 1

artificial pollution 1

circular model 1

defects control 1

discontinuous pollution 1

epitaxial silicon wafers 1

flashover 1

high voltage 1

impurities behavior 1

leakage current 1

semiconductor lasers，optically pumped vertical external cavity surface emitting lasers，nanolasers，topological insulator lasers 1

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Experimental study of pollution effect on the behavior of high voltage insulators under alternative current

Hani BENGUESMIA, Nassima M’ZIOU, Ahmed BOUBAKEUR

Frontiers in Energy 2021, Volume 15, Issue 1,   Pages 213-221 doi: 10.1007/s11708-017-0479-1

Abstract: the impact of the conductivity and the distribution of pollution on the behavior of the high voltage insulatorThis experimental model reproduces the real model which is the 1512L insulator.distilled water) that has different conductivities for a discontinuous distribution of the pollution on the insulatorFinally, the behavior of real and experimental model of the insulator is investigated.

Keywords： 1512L insulator     circular model     artificial pollution     flashover     leakage current     discontinuous pollution    

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A method for Absolute Protein Expression Quantity Measurement Employing Insulator RiboJ Article

Hongbin Yu, Zheng Wang, Hanyue Xu, Jiusi Guo, Qingge Ma, Xiangxu Mu, Yunzi Luo

Engineering 2018, Volume 4, Issue 6,   Pages 881-887 doi: 10.1016/j.eng.2018.09.012

Abstract: Here, we introduce a new method that combines the insulator RiboJ with the standard fluorescence curve

Keywords： RiboJ     Promoter measurement     Synthetic biology    

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Behavior of Impurities, Defects and Surface Morphology for Silicon and Silicon Based Semiconducting Materials

Tu Hailing

Strategic Study of CAE 2000, Volume 2, Issue 1,   Pages 7-17

Abstract: received strong growing interest, the manufacturing technologies and applications of SiGe, silicon-on-insulator

Keywords： silicon wafers     epitaxial silicon wafers     SiGe     silicon-on-insulator (SOI)     impurities behavior     defects control    

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High linearity U-band power amplifier design: a novel intermodulation point analysis method Research Article

Jie CUI, Peipei LI, Weixing SHENG,cuijie@njust.edu.cn

Frontiers of Information Technology & Electronic Engineering 2023, Volume 24, Issue 1,   Pages 176-186 doi: 10.1631/FITEE.2200082

Abstract: A ’s linearity determines the emission signal’s quality and the efficiency of the system. Nonlinear distortion can result in system bit error, out-of-band radiation, and interference with other channels, which severely influence communication system’s quality and reliability. Starting from the third-order intermodulation point of the s, the circuit’s nonlinearity is compensated for. The analysis, design, and implementation of linear class AB mm-Wave s based on GlobalFoundries 45 nm technology are presented. Three single-ended and differential stacked s have been implemented based on cascode cells and triple cascode cells operating in U-band frequencies. According to nonlinear analysis and on-wafer measurements, designs based on triple cascode cells outperform those based on cascode cells. Using single-ended measurements, the differential achieves a measured peak power-added efficiency (PAE) of 47.2% and a saturated output power () of 25.2 dBm at 44 GHz. The amplifier achieves a higher than 23 dBm and a maximum PAE higher than 25% in the measured bandwidth from 44 GHz to 50 GHz.

Keywords： CMOS silicon-on-insulator (SOI)     Linearity analysis     Milimeter wave (mm-Wave)     Power amplifier    

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Several New Semiconductor Lasers and Status, Challenges and Insights of Related Industries

Wei Xin, Li Ming, Li Jian, Wang Chao, Li Chuanchuan

Strategic Study of CAE 2020, Volume 22, Issue 3,   Pages 21-28 doi: 10.15302/J-SSCAE-2020.03.004

Abstract: investment in vertical external cavity surface emitting lasers, micro-nano lasers, and topological insulator

Keywords： semiconductor lasers，optically pumped vertical external cavity surface emitting lasers，nanolasers，topological insulator    

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Sb2Te3 topological insulator for 52 nm wideband tunable Yb-doped passively Q-switched Research

Tao Wang, Qiang Yu, Kun Guo, Xinyao Shi, Xuefen Kan, Yijun Xu, Jian Wu, Kai Zhang, Pu Zhou,wujian15203@163.com,kzhang2015@sinano.ac.cn

Frontiers of Information Technology & Electronic Engineering 2021, Volume 22, Issue 3,   Pages 287-436 doi: 10.1631/FITEE.2000577

Abstract: has the advantage of broadband saturable absorption from the visible to the infrared bands. Herein, the two-dimensional material saturable absorber (SA) of the family was first applied experimentally in a wideband tunable passively Q-switched Yb-doped fiber laser. High-quality crystals were synthesized by the flux zone method. The SA with fewer layers was further prepared via a modified mechanical exfoliation procedure. Meanwhile, stable wavelength-tunable passive Q-switching pulse operation was obtained in a Yb-doped fiber ring cavity based on the SA, where the central wavelength can be continuously tuned from 1040.89 to 1092.85 nm. Results suggest that has wideband saturable absorption properties, and that the tunable pulse laser can provide a convenient and simple source for practical applications.

Keywords： 拓扑绝缘体；Sb2Te3；光纤激光；被动调Q激光；波长可调谐激光    

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Title Author Date Type Operation

Experimental study of pollution effect on the behavior of high voltage insulators under alternative current

Hani BENGUESMIA, Nassima M’ZIOU, Ahmed BOUBAKEUR

Journal Article

A method for Absolute Protein Expression Quantity Measurement Employing Insulator RiboJ

Hongbin Yu, Zheng Wang, Hanyue Xu, Jiusi Guo, Qingge Ma, Xiangxu Mu, Yunzi Luo

Journal Article

Behavior of Impurities, Defects and Surface Morphology for Silicon and Silicon Based Semiconducting Materials

Tu Hailing

Journal Article

High linearity U-band power amplifier design: a novel intermodulation point analysis method

Jie CUI, Peipei LI, Weixing SHENG,cuijie@njust.edu.cn

Journal Article

Several New Semiconductor Lasers and Status, Challenges and Insights of Related Industries

Wei Xin, Li Ming, Li Jian, Wang Chao, Li Chuanchuan

Journal Article

Sb2Te3 topological insulator for 52 nm wideband tunable Yb-doped passively Q-switched

Tao Wang, Qiang Yu, Kun Guo, Xinyao Shi, Xuefen Kan, Yijun Xu, Jian Wu, Kai Zhang, Pu Zhou,wujian15203@163.com,kzhang2015@sinano.ac.cn

Journal Article