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Study on the Development of Germanium Industry in Yunnan Province

Lei Ting,Wang Shaolong

Strategic Study of CAE 2007, Volume 9, Issue 11, Pages 103-109

Abstract:

Germanium is a typical dispersed element, it is the most important semiconductorToday, Germanium is used principally in the field of infrared optical, telecommunication fiber opticsGermanium resource is scarce in the earth. The reserve of germanium in China ranks first in the world.Yunnan Province owns about40percent of germanium reserve of China and owns the basis of research and

Keywords： germanium resources industrial development of germanium sustainable development Yunnan

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Study on Germanium Extraction From Zinc Sulfate Leached Solution

Bao Fuyi,Fang Jun,Zhu Dahe,Chen Shiming,Huang Huatang,Li Xuequan,Liu Tao,Wang Kan,Huang Yanfen

Strategic Study of CAE 2001, Volume 3, Issue 12, Pages 58-67

Abstract: The Ge extraction is higher than 96% , are re-extraction is higher than 97% , Ge conlent in the germanium

Keywords： extraction germanium 7815 T-reagent

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Ultrathin microcrystalline hydrogenated Si/Ge alloyed tandem solar cells towards full solar spectrum conversion

Yu Cao, Xinyun Zhu, Xingyu Tong, Jing Zhou, Jian Ni, Jianjun Zhang, Jinbo Pang

Frontiers of Chemical Science and Engineering 2020, Volume 14, Issue 6, Pages 997-1005 doi: 10.1007/s11705-019-1906-0

Abstract: Thin film solar cells have been proved the next generation photovoltaic devices due to their low cost, less material consumption and easy mass production. Among them, micro-crystalline Si and Ge based thin film solar cells have advantages of high efficiency and ultrathin absorber layers. Yet individual junction devices are limited in photoelectric conversion efficiency because of the restricted solar spectrum range for its specific absorber. In this work, we designed and simulated a multi-junction solar cell with its four sub-cells selectively absorbing the full solar spectrum including the ultraviolet, green, red as well as near infrared range, respectively. By tuning the Ge content, the record efficiency of 24.80% has been realized with the typical quadruple junction structure of a-Si:H/a-Si Ge :H/µc-Si:H/µc-Si Ge :H. To further reduce the material cost, thickness dependent device performances have been conducted. It can be found that the design of total thickness of 4 m is the optimal device design in balancing the thickness and the . While the design of ultrathin quadruple junction device with total thickness of 2 m is the optimized device design regarding cost and long-term stability with a little bit more reduction in . These results indicated that our solar cells combine the advantages of low cost and high stability. Our work may provide a general guidance rule of utilizing the full solar spectrum for developing high efficiency and ultrathin multi-junction solar cells.

Keywords： thin films solar cells quadruple junction solar cell amorphous silicon silicon germanium alloy quantum