The purpose of this article is to examine the methods and equipments for abating waste gases and water produced during the manufacture of semiconductor materials and devices. Three methods and equipments are presented in this article to control three different groups of electronic wastes. The first group includes arsine and phosphine emitted during the manufacture in semiconductor materials. The abatement procedure for this group of pollutants consists in adding iodates, cupric and manganese salts to a multiple shower tower (MST) structure. The second group includes pollutants containing arsenic, phosphorus, HF, HCl, NO₂ and SO₃ emitted during the manufacture of semiconductor materials and devices. The abatement procedure involves mixing oxidants and alkali liquor in an oval column with a separator in the middle. The third group consists of the ions of As, P and heavy metals contained in the waste water. The abatement procedure includes adding CaCO₃ and ferric salts into the waste water in a flocculation-sedimentation compact device. Test results showed that all waste gases and water after the abatement presented in this article passed the effluent standards set by the National Environmental Protection Bureau. ^[1]